Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
Verified Supplier
17 Years
Since 2009
Menu

High current 64A 30V N Channel MOSFET Suzhou Good Ark Elec SSFN3964 for power supply applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SSFN3964 is a 30V N-Channel MOSFET designed for high efficiency applications. It utilizes advanced MOSFET process technology and a high cell density design to achieve low on-resistance and low gate charge, making it ideal for switched-mode power supplies and other power conversion systems. Key benefits include fast switching and reverse body recovery, contributing to overall system efficiency and reliability.

Product Attributes

  • Brand: goodarksemi
  • Model: SSFN3964
  • Technology: Advanced MOSFET process
  • Package Type: PPAK3X3

Technical Specifications

Main Product Characteristics
Parameter Value Unit Notes
Drain-Source Voltage 30 V V(BR)DSS
On-Resistance 4.5 m RDS(ON)
Continuous Drain Current (TC=25C) 64 A ID
Continuous Drain Current (TC=100C) 40 A ID
Pulsed Drain Current 256 A IDM
Single Pulse Avalanche Energy 115 mJ EAS
Single Pulse Avalanche Current 48 A IAS
Power Dissipation (TC=25C) 48 W PD
Power Dissipation Derate above 25C 0.36 W/C PD
Storage Temperature Range -50 to +150 C TSTG
Operating Junction Temperature Range -50 to +150 C TJ
Thermal Characteristics
Parameter Symbol Typ. Max. Unit
Thermal Resistance Junction to Ambient RJA --- 62 C/W
Thermal Resistance Junction to Case RJC --- 2.8 C/W
Electrical Characteristics (TJ=25C unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 --- --- V
BVDSS Temperature Coefficient BVDSS/ TJ Reference to 25C, ID=1mA --- 0.03 --- V/C
Drain-Source Leakage Current IDSS VDS=30V, VGS=0V, TJ=25C --- --- 1 uA
VDS=24V, VGS=0V, TJ=125C --- --- 10 uA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V --- --- 100 nA
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=15A --- 3.6 4.5 m
VGS=4.5V, ID=10A --- 4.9 6.4 m
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.6 2.5 V
VGS(th) Temperature Coefficient VGS(th) --- -4.17 --- mV/C
Forward Transconductance gfs VDS=10V, ID=3A --- 10 --- S
Total Gate Charge Qg VDS=15V, VGS=10V, ID=15A --- 34.6 70 nC
Gate-Source Charge Qgs --- 5.5 11 nC
Gate-Drain Charge Qgd --- 6.8 13 nC
Turn-On Delay Time Td(on) VDD=15V, VGS=10V, RG=3.3, ID=1A --- 9.7 20 nS
Rise Time Tr --- 15.8 31 nS
Turn-Off Delay Time Td(off) --- 37.4 75 nS
Fall Time Tf --- 12 24 nS
Input Capacitance Ciss VDS=15V, VGS=0V, F=1MHz --- 1910 3800 pF
Output Capacitance Coss --- 300 600 pF
Reverse Transfer Capacitance Crss --- 230 460 pF
Gate Resistance Rg VGS=0V, VDS=0V, F=1MHz --- 1.14 ---
Continuous Source Current IS --- --- 64 A
Pulsed Source Current ISM --- --- 128 A
Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25C --- --- 1 V
Package Outline Dimensions
Symbol Dimensions In Millimeters Dimensions In Inches Notes
Min Max Min Max
A 0.700 0.800 0.028 0.031
b 0.250 0.350 0.010 0.013
c 0.100 0.250 0.004 0.009
D 3.250 3.450 0.128 0.135
D1 3.000 3.200 0.119 0.125
D2 1.780 1.980 0.070 0.077
D3 0.130 REF 0.130 REF 0.005 REF 0.005 REF
E 3.200 3.400 0.126 0.133
E1 3.000 3.200 0.119 0.125
E2 2.390 2.590 0.094 0.102
e 0.650 BSC 0.650 BSC 0.026 BSC 0.026 BSC
H 0.300 0.500 0.011 0.019
L 0.300 0.500 0.011 0.019
L1 0.130 REF 0.130 REF 0.005 REF 0.005 REF
0 12 0 12
M 0.150 REF 0.150 REF 0.006 REF 0.006 REF

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

Request A Quote

Please check your email address.
Your message must be at least 20 characters.