High Current N channel MOSFET XTX BRP100N120P8 Featuring Low Gate Charge and 100V Drain Source Voltage

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Product Description

Product Overview

The BRP100N120P8 is an N-channel enhancement mode Power MOSFET from XTX Technology Inc. It features ultra-low RDS(ON) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters and power management systems. This lead-free component offers high performance with a drain-to-source voltage of 100V and a continuous drain current of 120A.

Product Attributes

Brand: XTX Technology Inc.
Origin: China (implied by company name and contact details)
Certifications: Lead Free

Technical Specifications

Symbol	Parameter	Condition	Min	Typ	Max	Unit
Off Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	ID = 250A, VGS = 0V	100	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 100V, VGS = 0V	-	-	1	uA
IGSS	Gate-Body Leakage Current	VDS = 0V, VGS = ±20V	-	-	±100	nA
On Characteristics
VGS(TH)	Gate Threshold Voltage	VDS = VGS, ID = 250uA	2.0	3.0	4.0	V
RDS(ON)	Static Drain-Source ON-Resistance	VGS = 10V, ID = 20A	3.4	4.25	-	m
Dynamic Characteristics
Ciss	Input Capacitance	VGS = 0V, VDS = 50V, f = 1MHz	5562	5773	6114	pF
Coss	Output Capacitance	VGS = 0V, VDS = 50V, f = 1MHz	2289	2371	2445	pF
Crss	Reverse Transfer Capacitance	VGS = 0V, VDS = 50V, f = 1MHz	99	106	111	pF
Qg	Total Gate Charge	VGS = 0 to 10V, VDS = 50V, ID = 20A	-	64	-	nC
Switching Characteristics
td(on)	Turn-On Delay Time	VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω	-	17	-	ns
tr	Turn-On Rise Time	VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω	-	21	-	ns
td(off)	Turn-Off Delay Time	VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω	-	37	-	ns
tf	Turn-Off Fall Time	VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω	-	16	-	ns
Drain-Source Diode Characteristics
IS	Continuous Source Current	-	-	-	120	A
VSD	Forward on voltage	VGS = 0V, IS = 1A	-	-	1.0	V
Trr	Reverse Recovery Time	IF = 20A, di/dt = 100A/us	-	66	-	ns
Qrr	Reverse Recovery Charge	IF = 20A, di/dt = 100A/us	-	136	-	nC
Absolute Maximum Ratings
VDS	Drain-to-Source Voltage	-	-	-	100	V
VGS	Gate-to-Source Voltage	-	-	±20	-	V
ID	Continuous Drain Current	TC = 25°C	-	-	120	A
ID	Continuous Drain Current	TC = 100°C	-	-	80	A
IDM	Pulsed Drain Current	(1)	-	-	480	A
EAS	Single Pulsed Avalanche Energy	(2)	-	-	306	mJ
PD	Power Dissipation, TC = 25°C	-	-	-	192	W
RJC	Thermal Resistance, Junction to Case	-	-	0.65	-	°C/W
TJ, TSTG	Junction & Storage Temperature Range	-	-55	-	+150	°C