NPN Silicon Transistor UTC 2SD669AG-C-AB3-R Suitable for Low Frequency Power Amplifier Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: Silicon
Certifications: Lead Free, Halogen Free

Technical Specifications

Ordering Number	Package	Pin Assignment	Collector-Emitter Voltage	hFE Rank	Green Package
2SD669xG-x-AA3-R	SOT-223	B C E	120V/160V	x	G
2SD669xG-x-AB3-R	SOT-89	B C E	120V/160V	x	G
2SD669xG-x-AE3-R	SOT-23	B E C	120V/160V	x	G
2SD669xG-x-AE3-6-R	SOT-23	E B C	120V/160V	x	G
2SD669xL-x-T60-K / 2SD669xG-x-T60-K	TO-126	E C B	120V/160V	x	L/G
2SD669xL-x-T6C-K / 2SD669xG-x-T6C-K	TO-126C	E C B	120V/160V	x	L/G
2SD669xL-x-T6S-K / 2SD669xG-x-T6S-K	TO-126S	E C B	120V/160V	x	L/G
2SD669xL-x-T92-B / 2SD669xG-x-T92-B	TO-92	E C B	120V/160V	x	L/G
2SD669xL-x-T92-K / 2SD669xG-x-T92-K	TO-92	E C B	120V/160V	x	L/G
2SD669xL-x-T9N-B / 2SD669xG-x-T9N-B	TO-92NL	E C B	120V/160V	x	L/G
2SD669xL-x-T9N-K / 2SD669xG-x-T9N-K	TO-92NL	E C B	120V/160V	x	L/G
2SD669xL-x-TM3-T / 2SD669xG-x-TM3-T	TO-251	B C E	120V/160V	x	L/G
2SD669xL-x-TN3-R / 2SD669xG-x-TN3-R	TO-252	B C E	120V/160V	x	L/G

Parameter	Symbol	Rating	Unit
Collector-Base Voltage	VCBO	180	V
Collector-Emitter Voltage (2SD669)	VCEO	120	V
Collector-Emitter Voltage (2SD669A)	VCEO	160	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1.5	A
Collector Peak Current	IC(PEAK)	3	A
Base Current	IB	0.5	A
Power Dissipation (SOT-223/SOT-89)	PD	0.5	W
Power Dissipation (SOT-23)	PD	0.35	W
Power Dissipation (TO-126/TO-126S)	PD	1.3	W
Power Dissipation (TO-126C)	PD	1	W
Power Dissipation (TO-92/TO-92NL)	PD	0.6	W
Power Dissipation (TO-251/TO-252)	PD	2	W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-40 ~ +150	C

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	BVCBO	IC=1mA, IE=0	180			V
Collector to Emitter Breakdown Voltage (2SD669)	BVCEO	IC=10mA, RBE=	120			V
Collector to Emitter Breakdown Voltage (2SD669A)	BVCEO	IC=10mA, RBE=	160			V
Collector to Emitter Breakdown Voltage (VBE=0V) (2SD669)	BVCES	IC=1mA, VBE=0V	120			V
Collector to Emitter Breakdown Voltage (VBE=0V) (2SD669A)	BVCES	IC=1mA, VBE=0V	160			V
Emitter to Base Breakdown Voltage	BVEBO	IE=1mA, IC=0	5			V
Collector Cut-off Current	ICBO	VCB=160V, IE=0			10	A
Emitter Cutoff Current	IEBO	VEB=4V, IC=0			10	A
DC Current Gain	hFE1	VCE=5V, IC=150mA	60		320
DC Current Gain	hFE2	VCE=5V, IC=500mA	30
Collector-Emitter Saturation Voltage	VCE(SAT)	IC=600mA, IB=50mA			1	V
Base-Emitter Saturation Voltage	VBE(SAT)	IC=600mA, IB=50mA			1.2	V
Base-Emitter Voltage	VBE	VCE=5V, IC=150mA		1.5		V
Current Gain Bandwidth Product	fT	VCE=5V, IC=150mA		140		MHz
Output Capacitance	Cob	VCB=10V, IE=0, f=1MHz			14	pF
Rise Time	tR	VCC=50V, IC=0.5A, IB1=IB2=10mA, tP=25s, Duty Cycle1%			0.5	s
Storage Time	tS				1.5	s
Fall Time	tF				0.7	s