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Power Amplification Transistor TOSHIBA TTC011B Q S Silicon NPN Epitaxial with 230V Collector Voltage

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Product Description

Product Overview

The TTC011B is a silicon NPN epitaxial bipolar transistor designed for power and audio-frequency amplification applications. It features a high collector voltage of 230V, low collector output capacitance of 20pF, and a high transition frequency of 100MHz. It is complementary to the TTA006B.

Product Attributes

  • Brand: Toshiba
  • Material: Silicon NPN Epitaxial
  • Packaging: TO-126N
  • Certifications: RoHS Compatible

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Static Characteristics (Ta = 25C unless otherwise specified)
Collector cut-off currentICBOVCB = 230 V, IE = 0 A200nA
Emitter cut-off currentIEBOVEB = 5 V, IC = 0 A100nA
Collector-emitter breakdown voltageV(BR)CEOIC = 10 mA, IB = 0 A230V
DC current gainhFEVCE = 5 V, IC = 0.1 A100320
Collector-emitter saturation voltageVCE(sat)IC = 0.5 A, IB = 50 mA1.5V
Base-emitter voltageVBEVCE = 5 V, IC = 0.5 A1.0V
Dynamic Characteristics (Ta = 25C unless otherwise specified)
Collector output capacitanceCobVCB = 10 V, IE = 0 A, f = 1 MHz20pF
Transition frequencyfTVCE = 10 V, IC = 0.1 A100MHz
Absolute Maximum Ratings (Ta = 25C unless otherwise specified)
Collector-base voltageVCBO230V
Collector-emitter voltageVCEO230V
Emitter-base voltageVEBO5V
Collector current (DC)IC1A
Collector current (pulsed)ICP2A
Base currentIB0.5A
Collector power dissipation (Tc = 25C)PC(Note 1)1.5W
Collector power dissipation (Ta = 25C)PC10W
Junction temperatureTj150C
Storage temperatureTstg-55to150C

Note 1: Ensure that the junction temperature does not exceed 150C.


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