N channel Power MOSFET XTX BRT30N180P2 featuring 720A Pulsed Drain Current and 306mJ Avalanche Energy
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Delivery Time:
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Product Description
Product Overview
The BRT30N180P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as Load Switch, PWM Application, and Power Management.
Product Attributes
- Brand: XTX Technology Inc.
- Product Code: BRT30N180P2
- Origin: China (implied by company name and contact details)
- Package: PDFN5*6-8L
- Marking: T30N180
- Certifications: Not specified in the provided text.
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-to-Source Voltage | 30 | V | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25C | 180 | A | ||
| ID | Continuous Drain Current | TC = 100C | 114 | A | ||
| IDM | Pulsed Drain Current (1) | 720 | A | |||
| EAS | Single Pulsed Avalanche Energy (2) | 306 | mJ | |||
| PD | Power Dissipation, TC = 25C | 100 | W | |||
| RJC | Thermal Resistance, Junction to Case | 1.0 | C/W | |||
| TJ, TSTG | Junction & Storage Temperature Range | -55 | +150 | C | ||
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | ID = 250A, VGS = 0V | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | - | - | 1 | uA |
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 1.3 | 1.8 | 2.5 | V |
| RDS(ON) | Static Drain-Source ON-Resistance(3) | VGS = 10V, ID = 30A | 2.6 | m | ||
| RDS(ON) | Static Drain-Source ON-Resistance(3) | VGS = 4.5V, ID = 20A | 4.2 | m | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 10V, f = 1MHz | 5093 | pF | ||
| Coss | Output Capacitance | 629 | pF | |||
| Crss | Reverse Transfer Capacitance | 508 | pF | |||
| Qg | Total Gate Charge | VGS = 0 to 10V, VDS = 15V, ID = 30A | 97 | nC | ||
| Qgs | Gate Source Charge | 20 | nC | |||
| Qgd | Gate Drain("Miller") Charge | 23 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = 10V, VDD = 15V, ID= 30A, RG = 3 | 16 | ns | ||
| tr | Turn-On Rise Time | 30 | ns | |||
| td(off) | Turn-Off Delay Time | 54 | ns | |||
| tf | Turn-Off Fall Time | 19 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Continuous Source Current | 180 | A | |||
| VSD | Forward on voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Reverse Recovery Time | IF = 30A, di/dt = 100A/us | - | 23 | ns | |
| Qrr | Reverse Recovery Charge | - | 14 | nC | ||
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