Audio Frequency Amplifier Silicon NPN Transistor TOSHIBA HN1C01FYTE85LF with High Current Capability

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Product Description

Product Overview

The HN1C01F is a Silicon NPN Epitaxial Type transistor from Toshiba, utilizing a PCT process. It is designed for audio frequency general purpose amplifier applications and features a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 400), and excellent hFE linearity. This transistor is ideal for various general-purpose amplification needs.

Product Attributes

Brand: TOSHIBA
Origin: Japan (implied by manufacturer and website)
Material: Silicon
Certifications: RoHS compatible (mentioned in restrictions)

Technical Specifications

Characteristic	Symbol	Rating	Unit	Test Condition	Min	Typ.	Max
Absolute Maximum Ratings	VCBO	60	V	(Q1, Q2 Common)
	VCEO	50	V	(Q1, Q2 Common)
	VEBO	5	V	(Q1, Q2 Common)
	IC	150	mA	(Q1, Q2 Common)
	IB	30	mA	(Q1, Q2 Common)
	PC*	300	mW	(Q1, Q2 Common)
	Tj (Note 1)	150	C	(Q1, Q2 Common)
	Tj (Note 2)	125	C	(Q1, Q2 Common)
Electrical Characteristics	ICBO		A	VCB = 60 V, IE = 0 A			0.1
	IEBO		A	VEB = 5 V, IC = 0 A			0.1
	hFE (Note)			VCE = 6 V, IC = 2 mA	120		400
	VCE (sat)		V	IC = 100 mA, IB = 10 mA		0.1	0.25
	fT		MHz	VCE = 10 V, IC = 1 mA	80
	Cob		pF	VCB = 10 V, IE = 0 A, f = 1 MHz		2	3.5