Low Saturation Voltage PNP Darlington Transistor UTC UB1580G-AB3-R Ideal for Amplifier and Switching

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Product Description

Product Overview

The UTC UB1580 is a PNP Darlington transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW. Key advantages include low collector-emitter saturation voltage.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Product Name: UB1580
Type: PNP EPITAXIAL PLANAR TRANSISTOR
Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Collector-Base Voltage	VCBO	-150	V
Collector-Emitter Voltage	VCEO	-150	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current (DC)	IC	-4	A
Collector Current (Pulse)	ICP	-6	A	Pulse Width 350s, Duty Cycle 2%
Collector Dissipation	PC	600	mW	(Ta=25C)
Junction Temperature	TJ	+150	C
Storage Temperature	TSTG	-55 ~ +150	C
Junction to Ambient Thermal Resistance	JA	208	C/W
Collector-Base Breakdown Voltage	BVCBO	-150	V	IC=-1mA, IB=0
Collector-Emitter Breakdown Voltage	BVCEO	-150	V	IC=-100A, IE=0
Collector Cut-off Current	ICBO	-10	A	VCB=-150V, IE=0
Collector Cut-off Current	ICEO	-10	A	VCB=-150V, IB=0
Emitter Cut-off Current	IEBO	-2	mA	VEB=-5V, IC=0
DC Current Gain	hFE	1000		VCE=-4V, IC=-1A
DC Current Gain	hFE	500		VCE=-4V, IC=-2A
Collector-Emitter Saturation Voltage	VCE(SAT)	-2	V	IC=-2A, IB=-2mA
		-2	V	IC=-1A
		-3	V	IC=-4A
Base-Emitter Saturation Voltage	VBE(ON)	-2.8	V	VCE=-4V, IC=-2A
Output Capacitance	Cob	200	pF	VCB=-10V, IE=0, f=1MHz