Power management MOSFET XYD X28N50DHA3 featuring low gate charge and fast switching in TO 247 package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The X28N50DHA3 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications requiring efficient power management. This MOSFET is 100% avalanche tested for reliability.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Model: X28N50DHA3
- Package: TO-247-3L
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | VDSS | 500 | V | - |
| VGS | -30 to 30 | V | - | |
| ID | 28 | A | TC=25 | |
| IDM | 112 | A | - | |
| EAS | 2531 | mJ | L=10mH,VD=50V, TC=25 | |
| PD | 529 | W | TC=25 | |
| PD | 3.4 | W | TA=25 | |
| Tj,TSTG | -55 to 150 | - | ||
| Rth(J-c) | 0.23 | /W | - | |
| Electrical Characteristics | BVDSS | 500 | V | VGS=0V,ID=250A |
| IDSS | 1 | A | VDS=500V,VGS=0V | |
| IGSSF | -100 | nA | VGS=30V,VDS=0V | |
| IGSSR | 100 | nA | VGS=-30V,VDS=0V | |
| VGS(th) | 2 to 4 | V | VDS=VGS,ID=250A | |
| RDS(on) | 0.17 to 0.24 | VGS=10V,ID=10A | ||
| gfs | 19 | S | VDS=10V,ID=10A | |
| Dynamic Characteristics | Ciss | 4379 | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Coss | 380 | pF | VDS=25V,VGS=0V,f=1.0MHZ | |
| Crss | 17 | pF | VDS=25V,VGS=0V,f=1.0MHZ | |
| Gate Charge Characteristics | Qg | 85 | nC | VDS=400V,ID=28A,VGS=10V |
| Qgs | 23 | nC | VDS=400V,ID=28A,VGS=10V | |
| Qgd | 15 | nC | VDS=400V,ID=28A,VGS=10V | |
| Reverse Diode | IS | 28 | A | - |
| ISM | 112 | A | - | |
| VSD | 1.2 | V | IS=10A,VGS=0V |
Applications
- LED power supplies
- Cell Phone Charger
- Standby Power
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina