PNP Triple Diffused Bipolar Transistor TOSHIBA 2SA1943N S1 E S Silicon Type for Power Amplification

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Product Description

Product Overview

The 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.

Product Attributes

Brand: TOSHIBA
Product Type: Bipolar Transistors
Material: Silicon
Type: PNP Triple-Diffused
Certifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Technical Specifications

Characteristics	Symbol	Rating	Unit	Test Condition	Min	Typ.	Max
Collector-base voltage	VCBO	-230	V
Collector-emitter voltage	VCEO	-230	V
Emitter-base voltage	VEBO	-5	V
Collector current (DC)	IC	-15	A
Base current	IB	-1.5	A
Collector power dissipation	PC	150	W	Tc = 25
Junction temperature	Tj	150
Storage temperature	Tstg	-55 to 150
Junction-to-case thermal resistance	Rth(j-c)		/W			0.83
Collector cut-off current	ICBO		A	VCB = -230 V, IE = 0 A			-5.0
Emitter cut-off current	IEBO		A	VEB = -5 V, IC = 0 A			-5.0
Collector-emitter breakdown voltage	V(BR)CEO	-230	V	IC = -50 mA, IB = 0 A
DC current gain	hFE(1)	80		VCE = -5 V, IC = -1 A			160
DC current gain	hFE(2)	35		VCE = -5 V, IC = -7 A
Collector-emitter saturation voltage	VCE(sat)		V	IC = -8 A, IB = -0.8 A		-1.1	-3.0
Base-emitter voltage	VBE		V	VCE = -5 V, IC = -7 A		-0.97	-1.5
Transition frequency	fT		MHz	VCE = -5 V, IC = -1 A		30
Collector output capacitance	Cob		pF	VCB = -10 V, IE = 0 A, f = 1 MHz		360