Silicon PNP Transistor UTC 2SB649AG C TN3 R Suitable for Complementary Pair Amplifier Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A for low-frequency power amplifiers.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: Silicon
Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter	Symbol	2SB649	2SB649A	Unit	Conditions
Collector-Base Voltage	VCBO	-180		V
Collector-Emitter Voltage	VCEO	-120	-160	V
Emitter-Base Voltage	VEBO	-5		V
Collector Current	IC	-1.5		A
Collector Peak Current	IC(PEAK)	-3		A
Power Dissipation (SOT-89)	PD	0.5		W
Power Dissipation (SOT-223)	PD	1		W
Power Dissipation (TO-92/TO-92NL)	PD	0.6		W
Power Dissipation (TO-126)	PD	1		W
Power Dissipation (TO-126C/TO-126S)	PD	1.3		W
Power Dissipation (TO-252)	PD	2		W
Junction Temperature	TJ	+150		C
Storage Temperature	TSTG	-40 ~ +150		C
Junction to Case (SOT-89)	JC	38		C/W
Junction to Case (SOT-223)	JC	15		C/W
Junction to Case (TO-92/TO-92NL)	JC	80		C/W
Junction to Case (TO-126)	JC	6.25		C/W
Junction to Case (TO-126C/TO-126S)	JC	10		C/W
Junction to Case (TO-252)	JC	4.5		C/W
Collector to Base Breakdown Voltage	BVCBO	-180		V	IC=-1mA, IE=0
Collector to Emitter Breakdown Voltage	BVCEO	-120	-160	V	IC=-10mA, RBE=
Emitter to Base Breakdown Voltage	BVEBO	-5		V	IE=-1mA, IC=0
Collector Cut-off Current	ICBO	-10		A	VCB=-160V, IE=0
DC Current Gain (hFE1)	hFE1	60-320	60-200		VCE=-5V, IC=-150mA (note)
DC Current Gain (hFE2)	hFE2	30	30		VCE=-5V, IC=-500mA (note)
Collector-Emitter Saturation Voltage	VCE(SAT)	-1		V	IC=-600mA, IB=-50mA
Base-Emitter Voltage	VBE	-1.5		V	VCE=-5V, IC=-150mA
Current Gain Bandwidth Product	fT	140		MHz	VCE=-5V, IC=-150mA
Output Capacitance	Cob	27		pF	VCB=-10V, IE=0, f=1MHz