Bias Resistor Built in Silicon NPN Epitaxial Transistor TOSHIBA RN1115 LF CT for Electronic Switching
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Product Description
Product Overview
The RN1114 to RN1118 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various circuit designs. These devices are AEC-Q101 qualified and complementary to the RN2114 to RN2118 series.
Product Attributes
- Brand: Toshiba
- Type: Silicon NPN Epitaxial Bipolar Transistors
- Process: PCT Process
- Features: Bias Resistor built-in Transistor, AEC-Q101 qualified
- Complementary to: RN2114 to RN2118
- Start of Commercial Production: 1994-08
Technical Specifications
| Part No. | R1 (k) | R2 (k) | VCBO (V) | VCEO (V) | VEBO (V) | IC (mA) | PC (mW) | Tj () | Tstg () | ICBO (nA) | ICEO (mA) | IEBO (mA) | hFE | VCE(sat) (V) | VI(ON) (V) | VI(OFF) (V) | fT (MHz) | Cob (pF) |
| RN1114 | 1 | 10 | 50 | 50 | 5 | 6 | 7 | 150 | -55 to 150 | 100 | 500 | 0.65 | 50 | 0.3 | 0.6 | 0.3 | 250 | 1.3 |
| RN1115 | 2.2 | 10 | 50 | 50 | 5 | 6 | 7 | 150 | -55 to 150 | 100 | 500 | 0.71 | 30 | 0.7 | 0.3 | 0.3 | 250 | 2.86 |
| RN1116 | 4.7 | 10 | 50 | 50 | 5 | 6 | 7 | 150 | -55 to 150 | 100 | 500 | 0.68 | 50 | 0.8 | 0.3 | 0.3 | 250 | 6.11 |
| RN1117 | 10 | 4.7 | 50 | 50 | 5 | 6 | 7 | 150 | -55 to 150 | 100 | 500 | 1.46 | 30 | 1.5 | 0.3 | 0.5 | 250 | 13.0 |
| RN1118 | 47 | 10 | 50 | 50 | 5 | 6 | 7 | 150 | -55 to 150 | 100 | 500 | 0.63 | 50 | 2.5 | 0.5 | 0.5 | 250 | 61.1 |
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