Epitaxial planar NPN transistor UTC 2SD1664G-Q-AB3-R optimized for medium power switching applications

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Product Description

Product Overview

The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable amplification and switching.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: NPN Silicon Transistor
Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter	Symbol	Rating Unit	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO	40					V
Collector-Emitter Voltage	VCEO	32					V
Emitter-Base Voltage	VEBO	5					V
Collector Current (DC)	IC	1					A
Collector Current (Pulse)	IC	2	(Duty=1/2, PW=20ms)				A
Collector Power Dissipation (SOT-89)	PC	0.5					W
Collector Power Dissipation (SOT-23)	PC	0.3					W
Collector Power Dissipation (TO-252)	PC	1.9					W
Junction Temperature	TJ	+150					C
Storage Temperature	TSTG	-55 ~ +150					C
Collector Base Breakdown Voltage	BVCBO	40	IC= 50A	40			V
Collector Emitter Breakdown Voltage	BVCEO	32	IC=1mA	32			V
Emitter Base Breakdown Voltage	BVEBO	5	IE=50A	5			V
Collector Cut-Off Current	ICBO	0.5	VCB=20V			0.5	A
Emitter Cut-Off Current	IEBO	0.5	VEB= 4V			0.5	A
DC Current Gain	hFE	82-390	VCE= 3V, Ic= 100mA	82		390
Collector-Emitter Saturation Voltage	VCE(SAT)	0.15-0.4	IC/IB=500mA /50mA		0.15	0.4	V
Transition Frequency	fT	150	VCE=5V, IE=-50mA, f=100MHz		150		MHz
Output Capacitance	Cob	15	VCB= 10V, IE= 0A, f=1MHz			15	pF