General purpose transistor XZT MMBT2907A PNP type with high current gain and low saturation voltage

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Product Description

Product Overview

The MMBT2907A is a PNP epitaxial planar construction transistor designed for general-purpose applications. It features a complementary NPN type, the MMBT2222A, and is available in a SOT-23 package. Key electrical characteristics include high DC current gain (hFE) and low saturation voltages.

Product Attributes

Brand: X T ELECTRONICS
Complementary NPN Type: MMBT2222A
Package: SOT-23
Marking: 2F

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCBO	Collector-Base Voltage				-60	V
VCEO	Collector-Emitter Voltage				-60	V
VEBO	Emitter-Base Voltage				-5	V
IC	Collector Current -Continuous				-600	mA
PD	Total Device Dissipation	(Ta=25)			250	mW
RJA	Thermal Resistance Junction to Ambient			500	/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		150
V(BR)CBO	Collector-base breakdown voltage	IC =-10A,IE=0	-60			V
V(BR)CEO*	Collector-emitter breakdown voltage	IC =-10mA,IB=0	-60			V
V(BR)EBO	Emitter-base breakdown voltage	EI =-10A,IC=0	-5			V
ICBO	Collector cut-off current	CB V =-50V,IE=0			-20	nA
IEBO	Base cut-off current	VEB=-3V, IC =0			-10	nA
ICEX	Collector cut-off current	CE V =-30 V, VBE(off) =-0.5V			-50	nA
hFE(1)	DC current gain	CE V =-10V,IC=-150mA	100	300
hFE(2)	DC current gain	CE V =-10V,IC=-0.1mA	75
hFE(3)	DC current gain	CE V =-10V,IC=-1mA	100
hFE(4)	DC current gain	CE V =-10V,IC=-10mA	100
hFE(5)	DC current gain	CE V =-10V,IC=-500mA	50
VCE(sat)*	Collector-emitter saturation voltage	CI =-150mA,IB=-15mA			-0.4	V
VCE(sat)*	Collector-emitter saturation voltage	CI =-500mA,IB=-50mA			-1.6	V
VBE(sat)*	Base-emitter saturation voltage	CI =-150mA,IB=-15mA			-1.3	V
VBE(sat)*	Base-emitter saturation voltage	CI =-500mA,IB=-50mA			-2.6	V
fT	Transition frequency	CE V =-20V,IC=-50mA,f=100MHz	200			MHz
td	Delay time	VCE=-30V,IC=-150mA,B1=-15mA			10	ns
tr	Rise time	VCE=-30V,IC=-150mA,B1=-15mA			25	ns
tS	Storage time	VCE=-30V,IC=-150mA,B1=-15mA			225	ns
tf	Fall time	VCE=-6V,IC=- 150mA, IB1=- IB2=- 15mA			60	ns