High Voltage P Channel MOSFET VBsemi Elec VB2658 Offering 2.5 kVRMS Isolation and Low Thermal Resistance
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Product Description
Product Overview
The VB2658 is a P-Channel 60-V (D-S) MOSFET designed for high-voltage applications. It features an isolated package with 2.5 kVRMS high voltage isolation, a sink to lead creepage distance of 4.8 mm, and a high operating temperature of 175 C. This MOSFET offers a dynamic dV/dt rating, low thermal resistance, and is available in a lead (Pb)-free option. It is suitable for various applications requiring robust high-voltage switching capabilities.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 A | - 60 | - | - | V |
| VDS Temperature Coefficient | VDS/TJ | Reference to 25 C, ID = - 1 mA | - | - 0.060 | - | V/C |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | - 1.0 | - | - 2.5 | V |
| Gate-Source Leakage | IGSS | VGS = 20 V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 60 V, VGS = 0 V | - | - | 100 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 48 VGS = 0 V, TJ = 150 C | - | - | 500 | A |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 3.2 A | - | - 0.05 | - | |
| Forward Transconductance | gfs | VDS = - 25 V, ID = - 3.2 A | 1.6 | - | - | S |
| Input Capacitance | Ciss | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | - | 270 | - | pF |
| Output Capacitance | Coss | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | - | 170 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | - | 31 | - | pF |
| Total Gate Charge | Qg | VGS = - 10 V, ID = - 4.7 A, VDS = - 48 V | - | - | 12 | nC |
| Gate-Source Charge | Qgs | VGS = - 10 V, ID = - 4.7 A, VDS = - 48 V | - | - | 3.8 | nC |
| Gate-Drain Charge | Qg d | VGS = - 10 V, ID = - 4.7 A, VDS = - 48 V | - | - | 5.1 | nC |
| Turn-On Delay Time | td(on) | VDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 | - | 11 | - | ns |
| Rise Time | tr | VDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 | - | 63 | - | ns |
| Turn-Off Delay Time | td(off) | VDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 | - | 9.6 | - | ns |
| Fall Time | tf | VDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 | - | 31 | - | ns |
| Internal Drain Inductance | LD | Between lead, 6 mm from package and center of die contact | - | 4.5 | - | nH |
| Internal Source Inductance | LS | Between lead, 6 mm from package and center of die contact | - | 7.5 | - | nH |
| Continuous Source-Drain Diode Current | IS | MOSFET symbol showing the integral reverse p-n junction diode | - | - | 5.2 | A |
| Pulsed Diode Forward Current | ISM | MOSFET symbol showing the integral reverse p-n junction diode | - | - | 21 | A |
| Body Diode Voltage | VSD | TJ = 25 C, IS = - 5.2 A, VGS = 0 V | - | - | 5.5 | V |
| Body Diode Reverse Recovery Time | trr | TJ = 25 C, IF = - 4.7 A, dI/dt = 100 A/s | - | 80 | 160 | ns |
| Body Diode Reverse Recovery Charge | Qrr | TJ = 25 C, IF = - 4.7 A, dI/dt = 100 A/s | - | 0.096 | 0.19 | C |
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