VBsemi Elec SI9430DY T1 E3 VB P Channel MOSFET 20 Volt for Load Switch Battery Switch Charger Switch

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Product Description

Product Overview

The SI9430DY-T1-E3-VB is a P-Channel 20-V (D-S) MOSFET designed for various portable device applications. It features Trench Power MOSFET technology, 100% Rg testing, and compliance with RoHS Directive 2002/95/EC. This device is suitable for use as a load switch, battery switch, and charger switch.

Product Attributes

Brand: Vishay (implied by datasheet format and common industry practice, though not explicitly stated as 'brand')
Origin: Taiwan (implied by www.VBsemi.com and service hotline information)
Certifications: Halogen-free According to IEC 61249-2-21 Definition, Compliant to RoHS Directive 2002/95/EC

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 A	- 20			V
VDS Temperature Coefficient	VDS/T	ID = - 250 A		- 12		mV/C
VGS(th) Temperature Coefficient	VGS(th)/T	VDS = VGS, ID = - 250 A		- 0.5	- 1.2	V
Gate-Source Threshold Voltage	VGS(th)	VDS = 0 V, ID = - 25 A		- 0.5	- 1.2	V
Gate-Source Leakage	IGSS	VDS = 0 V, VGS = 12 V			20	A
Zero Gate Voltage Drain Current	IDSS	VDS = - 20 V, VGS = 0 V			- 1	A
		VDS = - 20 V, VGS = 0 V, TJ = 55 C			- 10	A
On-State Drain Current	ID(on)	VDS - 5 V, VGS = - 4.5 V			- 20	A
Drain-Source On-State Resistance	RDS(on)	VGS = - 4.5 V, ID = - 5.6 A		0.015
		VGS = - 2.5 V, ID = - 5.3 A		0.021
		VGS = - 1.8 V, ID = - 2.5 A		0.040
Forward Transconductance	gfs	VDS = - 10 V, ID = - 5.6 A		35		S
Dynamic
Total Gate Charge	Qg	VDS = - 10 V, VGS = - 8 V, ID = - 5.6 A		50	75	nC
Gate-Source Charge	Qgs	VDS = - 10 V, VGS = - 4.5 V, ID = - 5.6 A		20	30	nC
Gate-Drain Charge	Qgd			3.3	8.4	nC
Gate Resistance	Rg	f = 1 MHz		0.2	2	k
Turn-On Delay Time	td(on)	VDD = - 10 V, RL = 1 , ID - 5 A, VGEN = - 4.5 V, Rg = 1		0.71	1.1	s
Rise Time	tr			1.7	2.6	s
Turn-Off Delay Time	td(off)			6	9	s
Fall Time	tf			3.2	5	s
Turn-On Delay Time	td(on)	VDD = - 10 V, RL = 1 , ID - 5 A, VGEN = - 10 V, Rg = 1		0.3	0.45	s
Rise Time	tr			0.6	0.9	s
Turn-Off Delay Time	td(off)			10	15	s
Fall Time	tf			3.5	5.5	s
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current	IS	TC = 25 C			- 6	A
Pulse Diode Forward Current	ISM				- 50	A
Body Diode Voltage	VSD	IS = - 5 A, VGS = 0 V		- 0.85	- 1.2	V
Body Diode Reverse Recovery Time	trr	IF = - 6 A, dI/dt = 100 A/s, TJ = 25 C		30	60	ns
Body Diode Reverse Recovery Charge	Qrr			20	40	nC
Reverse Recovery Fall Time				13		ns
Reverse Recovery Rise Time				17		ns
Absolute Maximum Ratings
Drain-Source Voltage	VDS				- 20	V
Gate-Source Voltage	VGS			12		V
Continuous Drain Current	ID	TC = 25 C			- 13	A
		TC = 70 C			- 10	A
		TA = 25 C			- 8	A
		TA = 70 C			- 5.3	A
Pulsed Drain Current	IDM				- 50	A
Continuous Source-Drain Diode Current	IS	TC = 25 C			- 2.9	A
Maximum Power Dissipation	PD	TC = 25 C		19		W
		TC = 70 C		12		W
		TA = 25 C		3.5		W
		TA = 70 C		2.2		W
Operating Junction and Storage Temperature Range	TJ, Tstg		- 55		150	C
Thermal Resistance Ratings
Maximum Junction-to-Ambient	RthJA	TA = 25 C		28	36	C/W
Maximum Junction-to-Case (Drain)	RthJC	Steady State		5.3	6.5	C/W