NPN transistor XZT BC817-25 featuring low collector emitter saturation voltage and high current gain

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Product Description

Product Overview

The BC817 is an NPN transistor designed for general AF applications. It features high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).

Product Attributes

Brand: X T ELECTRONICS
Product Type: Transistor (NPN)
Package: SOT-23
Complementary Type: BC807 (PNP)

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO	IC= 10A, IE=0			50	V
Collector-Emitter Voltage	VCEO	IC= 10mA, IB=0			45	V
Emitter-Base Voltage	VEBO	IE= 1A, IC=0			5	V
Collector Current	IC				500	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			300	mW
Thermal Resistance Junction To Ambient	RJA			417	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	VCBO	IC= 10A, IE=0	50			V
Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0	45			V
Emitter-base breakdown voltage	VEBO	IE= 1A, IC=0	5			V
Collector cut-off current	ICBO	VCB= 45 V , IE=0		0.1		A
Emitter cut-off current	IEBO	VEB= 4V, IC=0		0.1		A
DC current gain (Rank BC817-16)	hFE(1)	VCE=1V, IC= 100mA	100		250
DC current gain (Rank BC817-25)	hFE(1)	VCE=1V, IC= 100mA	160		400
DC current gain (Rank BC817-40)	hFE(1)	VCE=1V, IC= 100mA	250		600
DC current gain	hFE(2)	VCE=1V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC= 500mA, IB= 50mA			0.7	V
Base-emitter saturation voltage	VBE(sat)	IC= 500mA, IB= 50mA			1.2	V
Base-emitter voltage	VBE	VCE= 1 V, IC= 500mA		1.2		V
Collector capacitance	Cob	VCB=10V ,f=1MHz		10		pF
Transition frequency	fT	VCE= 5 V, IC=10mA, f=100MHz		100		MHz