High Current Dual N Channel MOSFET VBsemi Elec FDS9945 NL VB Featuring Trench Power MOSFET Structure
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Product Description
Product Overview
The FDS9945-NL-VB is a Dual N-Channel MOSFET designed for high-performance applications. It features a trench power MOSFET structure, offering 100% Rg and UIS testing for reliability. This device is suitable for applications requiring efficient power switching with a breakdown voltage of 60V and a continuous drain current of 7A per leg.
Product Attributes
- Brand: VBsemi
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 60 | - | - | V |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.5 | 2.0 | 2.5 | V |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = 60 V | - | - | 1 | A |
| Zero Gate Voltage Drain Current (TJ = 125 C) | IDSS | VGS = 0 V, VDS = 60 V, TJ = 125 C | - | - | 50 | A |
| On-State Drain Current | ID(on) | VDS VGS = 10 V | 20 | - | - | A |
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 4.5 A | - | 0.028 | - | |
| Drain-Source On-State Resistance (TJ = 125 C) | RDS(on) | VGS = 10 V, ID = 4.5 A, TJ = 125 C | - | 0.066 | - | |
| Drain-Source On-State Resistance (TJ = 175 C) | RDS(on) | VGS = 10 V, ID = 4.5 A, TJ = 175 C | - | 0.081 | - | |
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 4 A | - | 0.030 | - | |
| Forward Transconductance | gfs | VDS = 15 V, ID = 4.5 A | - | 15 | - | S |
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 600 | 700 | pF |
| Output Capacitance | Coss | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 110 | 140 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 50 | 62 | pF |
| Total Gate Charge | Qg | VGS = 10 V, VDS = 30 V, ID = 5.3 A | - | 11.7 | 18 | nC |
| Gate-Source Charge | Qgs | VGS = 10 V, VDS = 30 V, ID = 5.3 A | - | 1.8 | 2.7 | nC |
| Gate-Drain Charge | Qgd | VGS = 10 V, VDS = 30 V, ID = 5.3 A | - | 2.8 | 4.2 | nC |
| Gate Resistance | Rg | f = 1 MHz | - | 1.3 | - | |
| Turn-On Delay Time | td(on) | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 7 | 11 | ns |
| Rise Time | tr | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 3 | 5 | ns |
| Turn-Off Delay Time | td(off) | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 22.4 | 33.5 | ns |
| Fall Time | tf | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 2.1 | 3.2 | ns |
| Pulsed Current | ISM | - | - | - | 28 | A |
| Forward Voltage | VSD | IF = 2 A, VGS = 0 V | - | 0.75 | 1.1 | V |
| Junction-to-Ambient Thermal Resistance | RthJA | PCB Mount | - | - | 110 | C/W |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | - | - | 34 | - | C/W |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina