SOT23 Package Power MOSFET TWGMC SI2301B for Portable Electronics and DC DC Converter Load Switching

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Product Description

Product Overview

The SI2305/AO3401/SI2301B is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management and is available in a SOT-23 package.

Product Attributes

Brand: tw-gmc
Package: SOT-23

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
VDS	Drain-Source Voltage				-20	V
VGS	Gate-Source Voltage				10	V
ID	Continuous Drain Current				-2.3	A
IS	Continuous Source-Drain Current (Diode Conduction)				-0.6	A
PD	Power Dissipation				400	mW
RJA	Thermal Resistance From Junction To Ambient (t5s)			350		/W
TJ, Tstg	Operation Junction And Storage Temperature Range		-55		+150
Electrical Characteristics (Ta=25 unless otherwise specified)
V(BR)DSS	Drain-source breakdown voltage	VGS=0, ID=250A	-20			V
VGS(th)	Gate-threshold voltage	VDS= VGS, ID=250A	-0.4	-1.0		V
IGSS	Collector cut-off current	VDS=0, VGS=10V			100	nA
IDSS	Collector cut-off current	VDS=-20V, VGS=0V			-1	A
RDS(on)	Drain-source on-resistance	VGS=-4.5V, ID=-2A		110	130	m
RDS(on)	Drain-source on-resistance	VGS=-2.5V, ID=-1A		145	170	m
gFS	Forward transconductance	VDS=-5V, ID=-2.0A		4		S
VSD	Diode forward voltage	IS=-1A,VGS=0V			-1.2	V
Dynamic
Qg	Total gate charge	VDS=-10V, VGS=-4.5V, ID=-2.0A		5.5	10	nC
Qgs	Gate-source charge
Qgd	Gate-drain charge
Ciss	Input capacitance	VDS=10V, VGS=0V, f=1MHz		400		pF
Coss	Output capacitance			90		pF
Crss	Reverse transfer capacitance			70		pF
Switching
td(on)	Turn-on delay time	VDS=-10V, RL=10, ID-1A, VGEN=-4.5V, Rg=1		11		nS
tr	Rise time			35		nS
td(off)	Turn-off delay time			32		nS
tf	Fall time			12		nS