Load Switching P Channel Trench Power MOSFET VBsemi Elec SUD50P06-15L-GE3-VB with Low On State Resistance
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Product Description
Product Overview
The SUD50P06-15L-GE3-VB is a P-Channel Trench Power MOSFET designed for load switching applications. It offers a 60V drain-source voltage and low on-state resistance, making it suitable for efficient power management.
Product Attributes
- Brand: VBsemi
- Material Categorization: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TC = 25 °C) | ID | -45 | A | |||
| Continuous Drain Current (TJ = 175 °C) | ID | -40 | A | |||
| Pulsed Drain Current | IDM | -160 | A | |||
| Avalanche Current | IAS | L = 0.1 mH | -40 | A | ||
| Single Pulse Avalanche Energy | EAS | L = 0.1 mH | 125 | mJ | ||
| Power Dissipation (TC = 25 °C) | PD | 113 | W | |||
| Power Dissipation (TA = 25 °C) | PD | 2.5 | b, c | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = -250 µA | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 µA | -1.5 | -3 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = ±20 V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -60 V, VGS = 0 V | -1 | µA | ||
| Zero Gate Voltage Drain Current (TJ = 125 °C) | IDSS | VDS = -60 V, VGS = 0 V, TJ = 125 °C | -50 | µA | ||
| Zero Gate Voltage Drain Current (TJ = 150 °C) | IDSS | VDS = -60 V, VGS = 0 V, TJ = 150 °C | -100 | µA | ||
| On-State Drain Current | ID(on) | VDS = -5 V, VGS = -10 V | -50 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -17 A | 0.020 | Ω | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5 V, ID = -14 A | 0.025 | Ω | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -40 A, TJ = 125 °C | 0.030 | Ω | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -40 A, TJ = 150 °C | 0.035 | Ω | ||
| Forward Transconductance | gfs | VDS = -15 V, ID = -17 A | 61 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2950 | pF | ||
| Output Capacitance | Coss | 380 | pF | |||
| Reverse Transfer Capacitance | Crss | 305 | pF | |||
| Total Gate Charge | Qg | VDS = -30 V, VGS = -10 V, ID = -40 A | 110 | 165 | nC | |
| Gate-Source Charge | Qgs | 19 | nC | |||
| Gate-Drain Charge | Qgd | 28 | nC | |||
| Turn-On Delay Time | td(on) | VDD = -30 V, RL = 0.6 Ω, ID ≅ -40 A, VGEN = -10 V, RG = 6 Ω | 15 | 23 | ns | |
| Rise Time | tr | 70 | 105 | ns | ||
| Turn-Off Delay Time | td(off) | 175 | 260 | ns | ||
| Fall Time | tf | 175 | 260 | ns | ||
| Source-Drain Diode Ratings and Characteristics | ||||||
| Continuous Current | Is | TC = 25 °C | -40 | A | ||
| Pulsed Current | ISM | -80 | A | |||
| Forward Voltage | VSD | IF = -40 A, VGS = 0 V | -1 | -1.6 | V | |
| Reverse Recovery Time | trr | IF = -40 A, dI/dt = 100 A/µs | 45 | 70 | ns | |
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Sellina