Switching Device TWGMC 2N7002KT Plastic Encapsulate Mosfet in Compact SOT523 Package for Electronics

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Product Description

Product Overview

The 2N7002KT is a Plastic-Encapsulate MOSFET in a SOT-523 package. It offers low on-resistance (RDS(ON)), low gate threshold voltage, low input capacitance, and ESD protection up to 2KV. This device is suitable for various applications requiring efficient switching and low power consumption.

Product Attributes

Brand: tw-gmc.com
Product Code: 2N7002KT
Package Type: SOT-523
Marking: K72

Technical Specifications

Parameter	Symbol	Min.	Max.	Unit	Conditions
Drain Source Breakdown Voltage	BVDSS	60	-	V	ID = 10 A
Zero Gate Voltage Drain Current	IDSS	-	1	A	VDS = 60 V
Gate Source Leakage Current	IGSS	-	±10	A	VGS = ±20 V
Gate Threshold Voltage	VGS(th)	1	2.5	V	VDS = 10 V, ID = 250 A
Static Drain Source On-Resistance	RDS(ON)	-	3	Ω	VGS = 10 V, ID = 500 mA
Static Drain Source On-Resistance	RDS(ON)	-	4	Ω	VGS = 4.5 V, ID = 200 mA
Forward Transconductance	gfs	80	-	mS	VDS = 10 V, ID = 200 mA
Input Capacitance	Ciss	-	50	pF	VDS = 25 V, f = 1 MHz
Output Capacitance	Coss	-	25	pF	VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	5	pF	VDS = 25 V, f = 1 MHz

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDSS	60	V
Gate-Source Voltage	VGSS	±20	V
Drain Current (Continuous)	ID	300	mA
Drain Current (Pulse Width ≤10 s)	IDM	800	mA
Total Power Dissipation	Ptot	350	mW
Operating and Storage Temperature Range	Tj, Tstg	-55 to +150	°C