N Channel Trench Power MOSFET VBsemi Elec IPD78CN10N G VB with 100 Volt Drain Source Voltage Rating
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Product Description
Product Overview
The IPD78CN10N G-VB is a N-Channel Trench Power MOSFET designed for primary side switching applications. It offers a 100 V Drain-Source voltage rating and is 100% UIS tested, ensuring reliability in demanding applications. Key advantages include its trench power MOSFET structure and robust performance characteristics.
Product Attributes
- Brand: VBsemi
- Model: IPD78CN10N G-VB
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 100 | - | - | V |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.0 | - | 3.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 12 A | - | 0.055 | 0.057 | |
| Total Gate Charge | Qg | VDS = 50 V, VGS = 10 V, ID = 12 A | - | 21 | 32 | nC |
| Continuous Drain Current | ID | TC = 25 C | - | - | 25 | A |
| Pulsed Drain Current | IDM | - | - | - | 75 | A |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | - | - | 50 | A |
| Avalanche Current Pulse | IAS | L = 0.1 mH | - | - | 33 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 55 | mJ |
| Maximum Power Dissipation | PD | TC = 25 C | - | - | 83 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - | -55 | - | +175 | C |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | Steady State | - | 15 | 18 | C/W |
| Maximum Junction-to-Case Thermal Resistance | RthJC | Steady State | - | 1.5 | 1.8 | C/W |
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