Power MOSFET VBsemi Elec VBMB1208N with Full Avalanche Rating and Low Gate Charge Characteristics
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Product Description
Product Overview
The VBMB1208N is a high-performance N-Channel MOSFET designed for various power applications. It features a low-profile through-hole package with a TO-220 FULLPAK configuration, offering excellent thermal performance and ease of integration. Key advantages include a high operating temperature of 150 C, fast switching capabilities, and full avalanche rating, making it suitable for demanding environments. This MOSFET is halogen-free and compliant with RoHS directives, ensuring environmental responsibility.
Product Attributes
- Brand: VBsemi
- Product Type: N-Channel MOSFET
- Package: TO-220 FULLPAK
- Certifications: Halogen-free (IEC 61249-2-21 Definition), RoHS Directive 2002/95/EC
- Origin: Taiwan
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | VGS = 0 V, ID = 250 A | 200 | - | - | V |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 2.0 | - | 4.0 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 11 A | - | 0.065 | - | |
| Total Gate Charge | Qg | VGS = 10 V, ID = 20 A, VDS = 160 V | - | - | 70 | nC |
| Continuous Drain Current | ID | TC = 25 C, VGS at 10 V | - | - | 20 | A |
| Continuous Drain Current | ID | TC = 100 C, VGS at 10 V | - | - | 14 | A |
| Pulsed Drain Current | IDM | a, e | - | - | 72 | A |
| Single Pulse Avalanche Energy | EAS | b, e | - | - | 580 | mJ |
| Maximum Power Dissipation | PD | TC = 25 C | - | - | 42 | W |
| Maximum Power Dissipation | PD | TA = 25 C | - | - | 13 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - | -55 | - | +150 | C |
| Maximum Junction-to-Case (Drain) | RthJC | - | - | - | 1.0 | C/W |
| Continuous Source-Drain Diode Current | IS | - | - | - | 20 | A |
| Pulsed Diode Forward Current | ISM | a | - | - | 72 | A |
| Body Diode Voltage | VSD | TJ = 25 C, IS = 20 A, VGS = 0 Vb | - | - | 2.0 | V |
| Body Diode Reverse Recovery Time | trr | TJ = 25 C, IF = 20 A, dI/dt = 100 A/sb, c | - | 300 | 610 | ns |
| Body Diode Reverse Recovery Charge | Qrr | - | - | 3.4 | 7.1 | C |
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