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high speed switching device VBsemi Elec VBM16I15 designed for power supplies and industrial welding systems

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The VBM16I15 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. This IGBT is avalanche energy rated (UIS) and offers a maximum junction temperature of 175C, ensuring reliability in harsh environments. Key applications include telecommunications (server and telecom power supplies), lighting (HID and fluorescent ballast lighting), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (solar PV inverters), and switch mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Package Type: TO-220
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
PRODUCT SUMMARY
VCE VCE 600 V
IC IC (TC=25) 30 A
IC IC (TC=100) 15 A
VCE(sat) VCE(sat) 1.6 V
Qg Qg 65 nC
ICM ICM 45 A
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage VCE (TC = 25 C, unless otherwise noted) 600 V
Gate-Emitter Voltage VGE 30 V
Continuous Collector Current IC TC = 25 C, VGE at 15 V 30 A
Continuous Collector Current IC TC = 100 C, VGE at 15 V 15 A
Pulsed Collector Current ICM a 45 A
Maximum Power Dissipation PD TC = 25 C 170 W
Maximum Power Dissipation PD TC = 100 C 31 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 +175 C
Short Circuit Withstand Time tSC TC=150, VGE= 15V, VCE400V 3 s
Short Circuit Withstand Time tSC TC=100, VGE= 15V, VCE330V 5 s
Soldering Recommendations (Peak Temperature) for 10 s 260 C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient RthJA 40 80 C/W
Maximum Junction-to-Case RthJC 0.88 4.8 C/W
SPECIFICATIONS
Collector-Emitter Breakdown Voltage BVCE VGE = 0 V, IC = 250 A 600 - - V
Collector-Emitter Breakdown Voltage BVCE VGE = 0 V, IC = 1 mA 600 - - V
Gate-Source Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 480V,VGE = 0 V,TJ = 25 C - 1 20 A
Zero Gate Voltage Collector Current ICES VCE = 480 V,VGE = 0 V,TJ = 150 C - 1000 - A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V - - 2 nA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 30 A - - 1.6 V
Forward Transconductance gfs VCE = 20 V, IC = 30 A - 16 - S
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz - 1800 - pF
Output Capacitance Coes - 82 - pF
Reverse Transfer Capacitance Cres - 12 - pF
Turn-on Energy Eon VCS = 400 V , VGE = 0 /15V, IC = 30 A, Rg = 10 - 0.62 - J
Turn-off Energy Eoff VCS = 400 V , VGE = 0 /15V, IC = 30 A, Rg = 10 - 0.31 - J
Total Gate Charge Qg VGE = 15 V, IC = 30 A, VCE = 400 V - 65 - nC
Gate-Emitter Charge Qge - 14 - nC
Gate to Collector Charge Qgc - 13 - nC
Turn-On Delay Time td(on) - 60 - ns
Rise Time tr - 43 - ns
Turn-Off Delay Time td(off) - 184 - ns
Fall Time tf - 30 - ns
Internal emitter inductance LE measured 5 mm - 1.35 - nH
Diode Forward Current IF - - 15 A
Pulsed Diode Forward Current IFM - - 45 A
Diode Forward Voltage VF IF = 30 A - - 2.0 V
Reverse Recovery Time trr TJ = 25 C, IF = 30 A, dIF/dt = 200 A/s, VR = 400 V - 73 - ns
Reverse Recovery Charge Qrr - 45 - C
Reverse Recovery Current IRRM - 13 - A
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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