600V IGBT VBsemi Elec VBP16I80 Featuring Ultra Low Gate Charge for Telecommunications Power Supplies
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Product Description
Product Overview
The VBP16I80 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications power supplies, lighting ballasts, consumer and computing power supplies, industrial applications like welding and battery chargers, renewable energy inverters, and general switch mode power supplies (SMPS).
Product Attributes
- Brand: VBsemi
- Model: VBP16I80
- Package: TO-247
- Technology: Trench and Fieldstop IGBT
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | - | - | 600 | V |
| Continuous Collector Current | IC | TC=25 | - | - | 160 | A |
| Continuous Collector Current | IC | TC=100 | - | - | 80 | A |
| Pulsed Collector Current | ICM | - | - | - | 240 | A |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 80 A | - | - | 1.8 | V |
| Collector-Emitter Breakdown Voltage | BVCES | VGE = 0 V, IC = 250 A | 600 | - | - | V |
| Gate-Source Threshold Voltage | VGE(th) | VCE = VGE, ID = 250 A | 4 | 5 | 6 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 600 V, VGE = 0 V, TJ = 25 C | - | 1 | 20 | A |
| Zero Gate Voltage Collector Current | ICES | VCE = 600 V, VGE = 0 V, TJ = 150 C | - | - | 1000 | A |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGS = 20 V | - | - | 100 | nA |
| Forward Transconductance | gfs | VCE = 20 V, IC = 80 A | - | 1 | 7 | S |
| Input Capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 8200 | - | pF |
| Output Capacitance | Coes | - | - | 210 | - | pF |
| Reverse Transfer Capacitance | Cres | - | - | 165 | - | pF |
| Total Gate Charge | Qg | VGE = 20 V, IC = 80 A, VCE = 400 V | - | 80 | - | nC |
| Gate-Emitter Charge | Qge | - | - | 82 | - | nC |
| Gate to Collector Charge | Qgc | - | - | 115 | - | nC |
| Turn-on Delay Time | td(on) | - | - | 92 | - | ns |
| Rise Time | tr | - | - | 50 | - | ns |
| Turn-off Delay Time | td(off) | - | - | 154 | - | ns |
| Fall Time | tf | - | - | 28 | - | ns |
| Internal emitter inductance | LE | - | - | 13 | - | nH |
| Diode Forward Current | IF | - | - | - | 80 | A |
| Pulsed Diode Forward Current | IFM | - | - | - | 240 | A |
| Diode Forward Voltage | VF | IF = 80 A | - | - | 2.1 | V |
| Reverse Recovery Time | trr | TJ = 25 C, IF = 80 A, dIF/dt = 200 A/s, VR = 400 V | - | - | 73 | ns |
| Reverse Recovery Charge | Qrr | - | - | 0.51 | - | C |
| Reverse Recovery Current | IRRM | - | - | 9 | - | A |
| Maximum Power Dissipation | PD | TC = 25 C | - | - | 340 | W |
| Maximum Power Dissipation | PD | TC = 100 C | - | - | 180 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - | -55 | - | +175 | C |
| Short Circuit Withstand Time | tSC | TC=150, VGE=15V, VCE400V | - | 3 | - | s |
| Short Circuit Withstand Time | tSC | TC=100, VGE=15V, VCE330V | - | 5 | - | s |
| Soldering Recommendations (Peak Temperature) | - | for 10 s | - | - | 260 | C |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | - | - | - | 40 | C/W |
| Maximum Junction-to-Case Thermal Resistance | RthJC | - | - | 0.5 | - | C/W |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina