General purpose amplifier transistor UTC UD2195G-AB3-R SOT-89T R NPN epitaxial planar silicon device

Name: General purpose amplifier transistor UTC UD2195G-AB3-R SOT-89T R NPN epitaxial planar silicon device
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

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Delivery Time: Negotiable

Product Description

Product Overview

The UTC UD2195 is an NPN epitaxial planar silicon transistor designed for general-purpose amplifier and low-speed switching applications.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Origin: Taiwan (implied by URL)
Material: Silicon
Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter	Symbol	SOT-223	SOT-89	Unit	Notes
Collector-Base Voltage	VCBO	130		V
Collector-Emitter Voltage	VCEO	120		V
Emitter-Base Voltage	VEBO	5		V
Collector Current DC	IC	4		A
Collector Current Pulse	IC	6		A	Pulse Width_350s, Duty Cycle_2%
Collector Dissipation	PC	1	0.6	W	Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Junction Temperature	TJ	+150		C
Storage Temperature	TSTG	-55 ~ +150		C
Junction to Ambient	JA	125	208	C/W	Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Collector-Base Breakdown Voltage	BVCBO	130		V	IC=100A, IE=0
Collector-Emitter Breakdown Voltage	BVCEO	120		V	IC=1mA, IB=0
Base-Emitter Turn-On Voltage	VBE(ON)	2.8		V	VCE =4V, IC=2A
Collector Cutoff Current	ICBO	1		mA	VCB=100V, IE=0
Collector Cutoff Current	ICEO	2		mA	VCE =50V, IB=0
Emitter Cutoff Current	IEBO	2		mA	VEB=5V, IC=0
DC Current Gain	hFE	1000			VCE=4V, IC=1A
DC Current Gain	hFE	500			VCE=4V, IC=2A
Collector-Emitter Saturation Voltage	VCE(SAT)	2		V	IC=2A, IB=2mA
Output Capacitance	Cob	200		pF	VCB=10V, IE=0A, f=1MHz