power switching device VBsemi Elec VBP165I60 650V IGBT with low VCEsat and ultra low gate charge
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Product Description
Product Overview
The VBP165I60 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). It is widely used in telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (PV inverters), and switch mode power supplies (SMPS).
Product Attributes
- Brand: VBsemi
- Model: VBP165I60
- Package: TO-247
- RoHS Compliant: Yes
- Halogen-Free: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | 650 | V | |||
| Continuous Collector Current | IC | TC=25 | 120 | A | ||
| Continuous Collector Current | IC | TC=100 | 60 | A | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 60 A, VGE = 15 V | 1.7 | V | ||
| Pulsed Collector Current | ICM | 180 | A | |||
| Maximum Power Dissipation | PD | TC = 25 C | 450 | W | ||
| Maximum Power Dissipation | PD | TC = 100 C | 200 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +175 | C | ||
| Collector-Emitter Breakdown Voltage | BVCES | VGE = 0 V, IC = 250 A | 650 | - | - | V |
| Gate-Source Threshold Voltage | VGE(th) | VCE = VGE, ID = 250 A | 4 | 5 | 6 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, TJ = 25 C | - | 1 | 20 | A |
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, TJ = 150 C | - | - | 1000 | A |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGS = 20 V | - | - | 100 | nA |
| Forward Transconductance | gfs | VCE = 20 V, IC = 60 A | - | 40 | - | S |
| Input Capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 6210 | - | pF |
| Output Capacitance | Coes | - | 228 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 60 | - | pF | |
| Turn-on Energy | Eon | VCE = 400 V, VGE = 15 V, IC = 60 A, Rg = 10 | - | 0.76 | - | mJ |
| Turn-off Energy | Eoff | VCE = 400 V, VGE = 15 V, IC = 60 A, Rg = 10 | - | 1.50 | - | mJ |
| Total Gate Charge | Qg | IC = 60 A, VCE = 400 V, VGE = 15 V | - | 165 | - | nC |
| Gate-Emitter Charge | Qge | - | 18 | - | nC | |
| Gate to Collector Charge | Qgc | - | 2 | 3 | nC | |
| Turn-On Delay Time | td(on) | - | 72 | - | ns | |
| Rise Time | tr | - | 42 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 70 | - | ns | |
| Fall Time | tf | - | 26 | - | ns | |
| Internal Emitter Inductance | LE | measured 5 mm from case | - | - | 13 | nH |
| Diode Forward Current | IF | - | - | 60 | A | |
| Pulsed Diode Forward Current | IFM | - | - | 180 | A | |
| Diode Forward Voltage | VF | IF = 60 A | - | - | 2.1 | V |
| Reverse Recovery Time | trr | TJ = 25 C, IF = 60 A, dIF/dt = 200 A/s, VR = 400 V | - | - | 60 | ns |
| Reverse Recovery Charge | Qrr | - | - | 0.3 | C | |
| Reverse Recovery Current | IRRM | - | - | 1 | A | |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | - | 40 | - | C/W | |
| Maximum Junction-to-Case Thermal Resistance | RthJC | - | 0.5 | - | C/W |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina