NPN transistor UTC 2SC3647G-R-AB3-R optimized for high voltage switching in small hybrid IC packages
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Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 is an NPN silicon transistor designed for high-voltage switching applications. It features high breakdown voltage, large current capacity, and fast switching times, making it suitable for high-density, small-sized hybrid ICs.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO.,LTD
- Model: 2SC3647
- Material: Silicon
- Package: SOT-89
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Collector to Base Voltage | VCBO | 120 | V | |
| Collector to Emitter Voltage | VCEO | 100 | V | |
| Emitter to Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 2 | A | |
| Collector Current (Pulse) | ICP | 3 | A | |
| Collector Dissipation | PC | 500 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -40 ~ +150 | C | |
| Collector-Base Breakdown Voltage | BVCBO | 120 | V | IC = 10A, IE =0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC = 1mA, RBE = |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 10A, IC=0 |
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 100V, IE =0 |
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 4V, IC =0 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.13 ~ 0.4 | V | IC = 1A, IB = 100mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.85 ~ 1.2 | V | IC = 1A, IB = 100mA |
| Output Capacitance | Cob | 16 | pF | VCB = 10V, f =1MHz |
| DC Current Gain | hFE | 100 ~ 400 | VCE = 5V, IC = 100mA | |
| Turn-ON Time | tON | 80 | ns | See specified Test Circuit. |
| Storage Time | tSTG | 1000 | ns | See specified Test Circuit. |
| Fall Time | tF | 50 | ns | See specified Test Circuit. |
| Gain-Bandwidth Product | fT | 120 | MHz | VCE = 10V, IC = 100mA |
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