Medium Speed Switching and Audio Frequency Amplification Using UTC MMBT1616AG-G-AE3-R NPN Transistor

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Product Description

Product Overview

The MMBT1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. Packaged in a SOT-23 (JEDEC TO-236) case, it offers reliable performance for various electronic circuits.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: Epitaxial Silicon
Certifications: Lead Free, Halogen Free (for specific order numbers)

Technical Specifications

Parameter	Symbol	MMBT1616	MMBT1616A	Unit	Test Conditions	Min	Typ	Max
Collector to Base Voltage	VCBO	60		V
Collector to Base Voltage	VCBO		120	V
Collector to Emitter Voltage	VCEO	50		V
Collector to Emitter Voltage	VCEO		60	V
Emitter to Base Voltage	VEBO	6		V
Collector Current DC	IC	1		A
Collector Current Pulse	IC	2		A	Pulse width ≤10ms, Duty cycle < 50%
Total Collector Dissipation	PD	350		mW	TA=25°C
Junction Temperature	TJ	+150		°C
Storage Temperature	TSTG	-55 ~ +150		°C
Collector Cut-Off Current	ICBO	100		nA	VCB=60V
Emitter Cut-Off Current	IEBO	100		nA	VEB= 6V
Collector-Emitter Saturation Voltage	VCE(SAT)	0.3		V	IC=1A, IB=50mA	0.15
Base-Emitter Saturation Voltage	VBE(SAT)	1.2		V	IC=1A, IB=50mA	0.9
Base Emitter On Voltage	VBE(ON)	700		mV	VCE=2V, IC=50mA	600	640
DC Current Gain	hFE1	600			VCE=2V, IC=100mA	135
		400
		270
DC Current Gain	hFE2	81			VCE=2V, IC=1A
Current Gain Bandwidth Product	fT	160		MHz	VCE=2V, IC=100mA	100
Output Capacitance	Cob	19		pF	VCB=10V, f=1MHz
Turn On Time	ton	0.07		us	VCE=10V, IC=100mA
Storage Time	ts	0.95		us	IB1=-IB2=10mA
Fall Time	tf	0.07		us	VBE(off)=-2-3V