High Current Switching NPN Transistor UTC 2SD1804L-T-TN3-R with Fast Switching and Excellent Linearity

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Product Description

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SD1804 is an NPN Silicon Transistor designed for high current switching applications. It offers a low collector-to-emitter saturation voltage, high current capability, high transition frequency (fT), excellent linearity of hFE, and fast switching times. Its small and slim package facilitates the miniaturization of electronic devices.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: Silicon
Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter	Symbol	Rating/Condition	Unit
Absolute Maximum Ratings
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	8	A
Collector Current (PULSE)	IC(PULSE)	12	A
Collector Dissipation (TO-220, TC=25C)	PD	65	W
Collector Dissipation (TO-251/TO-252, TA=25C)	PD	2	W
Junction Temperature	TJ	+150	C
Storage Temperature	TSTG	-55~+150	C
Electrical Characteristics (TA=25C, unless otherwise specified)
Collector-Base Breakdown Voltage	BVCBO	IC=10A, IE=0	60 V
Collector-Emitter Breakdown Voltage	BVCEO	IC=1mA, RBE=	50 V
Emitter-Base Breakdown Voltage	BVEBO	IE=10A, IC=0	6 V
Collector Cutoff Current	ICBO	VCB=40V, IE=0	1 A
Emitter Cutoff Current	IEBO	VEB=4V, IC=0	1 A
DC Current Gain (hFE1)	hFE1	VCE=2V, IC=0.5A	70 ~ 400
DC Current Gain (hFE2)	hFE2	VCE=2V, IC=6A	35 (MIN)
Gain-Bandwidth Product	fT	VCE=5V, IC=1A	180 MHz
Output Capacitance	Cob	VCE=10V, f=1MHz	65 pF
Collector-Emitter Saturation Voltage	VCE(SAT)	IC=4A, IB=0.2A	200 ~ 400 mV
Base-Emitter Saturation Voltage	VBE(SAT)	IC=4A, IB=0.2A	0.95 ~ 1.3 V
Storage Time	tSTG	See test circuit	500 ns
Fall Time	tF	See test circuit	20 ns

Ordering Information

Ordering Number	Package	Pin Assignment	Packing
2SD1804L-x-TA3-T 2SD1804G-x-TA3-T	TO-220	B C E	Tube
2SD1804L-x-TM3-T 2SD1804G-x-TM3-T	TO-251	B C E	Tube
2SD1804L-x-TN3-R 2SD1804G-x-TN3-R	TO-252	B C E	Tape Reel