VISHAY MB2S-E3 80 fast recovery bridge rectifier suitable for office equipment and telecommunication
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The Vishay General Semiconductor MB2S, MB4S, and MB6S are miniature glass-passivated fast recovery surface-mount bridge rectifiers designed for general-purpose AC/DC bridge full-wave rectification. These rectifiers offer space-saving benefits on printed circuit boards, are ideal for automated placement, and feature high surge current capability. They are suitable for power supply, lighting ballasts, battery chargers, home appliances, office equipment, and telecommunication applications.
Product Attributes
- Brand: Vishay General Semiconductor
- Certifications: UL recognition, file number E54214
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
- Compliance: RoHS-compliant, commercial grade
- Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102
- Whisker Test: E3 suffix meets JESD 201 class 1A whisker test
- Flammability Rating: Molding compound meets UL 94 V-0
Technical Specifications
| Parameter | Symbol | MB2S | MB4S | MB6S | Unit |
| Device marking code | 2 | 4 | 6 | ||
| Maximum repetitive peak reverse voltage | VRRM | 200 | 400 | 600 | V |
| Maximum RMS voltage | VRMS | 140 | 280 | 420 | V |
| Maximum DC blocking voltage | VDC | 200 | 400 | 600 | V |
| Maximum average forward output rectified current (on glass-epoxy PCB) | IF(AV) | 0.5 | A | ||
| Maximum average forward output rectified current (on aluminum substrate) | IF(AV) | 0.8 | A | ||
| Peak forward surge current (8.3 ms single half sine-wave) | IFSM | 35 | A | ||
| Rating for fusing (t < 8.3 ms) | I2t | 5.0 | A2s | ||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||
| Maximum instantaneous forward voltage per diode (IF = 0.4 A) | VF | 1.0 | V | ||
| Maximum DC reverse current per diode (TA = 25 C, rated DC blocking voltage) | IR | 5.0 | A | ||
| Maximum DC reverse current per diode (TA = 125 C, rated DC blocking voltage) | IR | 100 | A | ||
| Typical junction capacitance per diode (4.0 V, 1 MHz) | CJ | 13 | pF | ||
| Typical thermal resistance (on glass-epoxy PCB) | RJA | 85 | C/W | ||
| Typical thermal resistance (on aluminum substrate) | RJA | 70 | C/W | ||
| Typical thermal resistance (lead) | RJL | 20 | C/W | ||
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