Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit
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Product Description
Product Overview
The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable NPN amplification and switching capabilities.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: NPN Silicon Transistor
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Rating (Unit) | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||||
| Collector-Base Voltage | VCBO | 40 V | V | ||||
| Collector-Emitter Voltage | VCEO | 32 V | V | ||||
| Emitter-Base Voltage | VEBO | 5 V | V | ||||
| Collector Current DC | IC | 1 A | A | ||||
| Collector Current (Pulse) | IC | 2 A | Duty=1/2, PW=20ms | A | |||
| Collector Power Dissipation (SOT-89) | PC | 0.5 W | W | ||||
| Collector Power Dissipation (SOT-23) | PC | 0.3 W | W | ||||
| Collector Power Dissipation (TO-252) | PC | 1.9 W | W | ||||
| Junction Temperature | TJ | +150 C | C | ||||
| Storage Temperature | TSTG | -55 ~ +150 C | C | ||||
| Electrical Characteristics | |||||||
| Collector Base Breakdown Voltage | BVCBO | 40 V | IC= 50A | V | |||
| Collector Emitter Breakdown Voltage | BVCEO | 32 V | IC=1mA | V | |||
| Emitter Base Breakdown Voltage | BVEBO | 5 V | IE=50A | V | |||
| Collector Cut-Off Current | ICBO | 0.5 A | VCB=20V | A | |||
| Emitter Cut-Off Current | IEBO | 0.5 A | VEB=4V | A | |||
| DC Current Gain | hFE | 82 - 390 | VCE= 3V, Ic= 100mA | 82 | 390 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.15 - 0.4 V | IC/IB=500mA /50mA | 0.15 | 0.4 | V | |
| Transition Frequency | fT | 150 MHz | VCE=5V, IE=-50mA, f=100MHz | 150 | MHz | ||
| Output Capacitance | Cob | 15 pF | VCB= 10V, IE= 0A, f=1MHz | 15 | pF | ||
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