Small Signal Dual PNP Transistor YANGJIE UMT1N in SOT363 Package with UL94 V0 and RoHS Certification
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The UMT1N is a dual PNP small signal transistor in a SOT-363 surface mount package, ideally suited for automatic insertion. It features epoxy that meets UL-94 V-0 flammability rating and tin-plated leads solderable per J-STD-002 and JESD22-B102. This transistor is designed for general electronic applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: UMT1N
- Package: SOT-363
- Flammability Rating: UL-94 V-0
- Certifications: RoHS Compliant
- Marking: T1
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Collector-Base Voltage | VCBO | V | IC=-50A,IE=0 | -60 |
| Collector-Emitter Voltage | VCEO | V | IC =-1mA,IB=0 | -50 |
| Emitter-Base Voltage | VEBO | V | IE=-50A,IC=0 | -6 |
| Collector Current | IC | mA | -150 | |
| Total Device Dissipation | PC | mW | Ta=25 | 200 |
| Junction Temperature | Tj | -55 to +150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | V | IC=-50A,IE=0 | -60 |
| Collector-emitter breakdown voltage | V(BR)CEO | V | IC =-1mA,IB=0 | -50 |
| Emitter-base breakdown voltage | V(BR)EBO | V | IE=-50A,IC=0 | -6 |
| Collector-Base cut-off current | ICBO | nA | VCB=-60V,IB=0 | -100 |
| Emitter-Base cut-off current | IEBO | nA | VEB=-6V,IC=0 | -100 |
| DC current gain | hFE | VCE=-6V,IC=-1mA | 120 - 560 | |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-50mA,IB=-5mA | -0.5 |
| Transition frequency | Ft | MHz | VCE=-12V,IE=2mA,f=100MHz | 140 |
| Output capacitance | Cob | pF | VCB=-12V,IE=0A,f=1MHz | 5 |
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