High current gain NPN silicon transistor UTC PZTA42G designed for in telephone switch and high voltage switch systems

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Product Description

Product Overview

The UTC PZTA42/43 are high voltage NPN silicon transistors designed for telephone switch and high voltage switch applications. They offer high current gain and are complementary to the UTC PZTA92/93 series.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: Silicon
Certifications: Lead Free, Halogen Free (indicated by 'G' in ordering number)

Technical Specifications

Parameter	Symbol	PZTA42 Rating	PZTA43 Rating	Unit	Conditions
Collector-Base Voltage	VCBO	300	200	V
Collector-Emitter Voltage	VCEO	300	200	V
Emitter-Base Voltage	VEBO	6		V
Collector Current	IC	500		mA
Collector Power Dissipation	PC	1		W	TA=25C
Junction Temperature	TJ	150		C
Storage Temperature	TSTG	-55 ~ +150		C
Collector-Base Breakdown Voltage	BVCBO	300	200	V	IC =100A, IE=0
Collector-Emitter Breakdown Voltage	BVCEO	300	200	V	IC =1mA, IB=0
Emitter-Base Breakdown Voltage	BVEBO	6		V	IE=100A, IC =0
Collector Cut-Off Current	ICBO	100		nA	VCB=200V, IE=0 (PZTA42); VCB=160V, IE=0 (PZTA43)
Emitter Cut-Off Current	IEBO	100		nA	VBE=6V, IC =0 (PZTA42); VBE=4V, IC =0 (PZTA43)
DC Current Gain	hFE	80			VCE=10V, IC =1mA
DC Current Gain	hFE	80-300			VCE=10V, IC =10mA
DC Current Gain	hFE	80			VCE=10V, IC =30mA
Collector-Emitter Saturation Voltage	VCE(SAT)	0.2		V	IC =20mA, IB=2mA
Base-Emitter Saturation Voltage	VBE(SAT)	0.90		V	IC =20mA, IB=2mA
Current Gain Bandwidth Product	fT	50		MHz	VCE=20V, IC =10mA, f=100MHz
Collector Base Capacitance	CCB	3	4	pF	VCB=20V, IE=0, f=1MHz