High current density bridge rectifier VISHAY PB4010-E3/45 designed for home appliances and white goods

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Product Description

Vishay isoCink+ Enhanced Bridge Rectifiers (PB4006, PB4008, PB4010)

The Vishay isoCink+ series offers enhanced high-current density bridge rectifiers in a single in-line package. These devices provide superior thermal conductivity and are designed for general-purpose AC/DC full-wave rectification in switching power supplies, home appliances, and white-goods applications. They are tested to UL 1557 standard for safety, electrically isolated semiconductor devices, with dielectric testing up to 1500V and epoxy meeting UL 94 V-0 flammability rating.

Product Attributes

Brand: Vishay General Semiconductor
Product Line: isoCink+
Certifications: UL recognition file number E312394 (QQQX2) UL 1557
Material Compliance: RoHS-compliant (E3 suffix)
Flammability Rating: UL 94 V-0
Lead Finish: Matte tin plated, solderable per J-STD-002 and JESD 22-B102
Whisker Test: E3 suffix meets JESD 201 class 1A

Technical Specifications

Parameter	Symbol	PB4006	PB4008	PB4010	Unit
Primary Characteristics
Average Forward Current	IF(AV)	40	40	40	A
Peak Reverse Voltage	VRRM	600	800	1000	V
Peak Forward Surge Current	IFSM	400	400	400	A
Reverse Current	IR	10	10	10	µA
Forward Voltage at IF = 20 A	VF	0.94	0.94	0.94	V
Max. Junction Temperature	TJ max.	150	150	150	°C
Maximum Ratings (TA = 25 °C unless otherwise noted)
Maximum Repetitive Peak Reverse Voltage	VRRM	600	800	1000	V
Average Rectified Forward Current (TC = 87 °C) (1)	IO	40	40	40	A
Average Rectified Forward Current (TA = 25 °C) (2)	IO	4.4	4.4	4.4	A
Non-Repetitive Peak Forward Surge Current (8.3 ms single sine-wave, TJ = 25 °C)	IFSM	400	400	400	A
Rating for fusing (t < 8.3 ms) (TJ = 25 °C)	I²t	664	664	664	A²s
Operating Junction and Storage Temperature Range	TJ, TSTG	-55 to +150			°C
Electrical Characteristics (TA = 25 °C unless otherwise noted)
Maximum Instantaneous Forward Voltage per diode (IF = 20 A) (1)	VF	1.01 / 1.10 (25°C) 0.94 / 1.00 (125°C)	1.01 / 1.10 (25°C) 0.94 / 1.00 (125°C)	1.01 / 1.10 (25°C) 0.94 / 1.00 (125°C)	V
Reverse Current per diode (rated VR) (2)	IR	- / 10 (µA @ 25°C) - / 130 (500 @ 125°C)	- / 10 (µA @ 25°C) - / 130 (500 @ 125°C)	- / 10 (µA @ 25°C) - / 130 (500 @ 125°C)	µA / pF
Typical Junction Capacitance per diode (4.0 V, 1 MHz)	CJ	120	120	120	pF
Thermal Characteristics (TA = 25 °C unless otherwise noted)
Typical Thermal Resistance (With heatsink) (1)	RθJC	0.75	0.75	0.75	°C/W
Typical Thermal Resistance (Without heatsink, free air) (2)	RθJA	18	18	18	°C/W