LowSide Synchronous Rectifier 60V NChannel Trench Power MOSFET VBsemi Elec SI4850DY-T1-E3-VB Device

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Product Description

Product Overview

The SI4850DY-T1-E3-VB is a 60-V N-Channel Trench Power MOSFET optimized for low-side synchronous rectifier operation. It offers high efficiency and is suitable for applications like CCFL inverters. This device is halogen-free and has undergone 100% Rg and UIS testing.

Product Attributes

Brand: VBsemi
Certifications: Halogen-free (According to IEC 61249-2-21 Definition)
Material: Trench Power MOSFET
Origin: Taiwan

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static
Drain-Source Breakdown Voltage	V_DS	V_GS = 0 V, I_D = 250 A			60	V
VDS Temperature Coefficient	╯V_DS/T_J	I_D = 250 A		55		mV/C
VGS(th) Temperature Coefficient	╯V_GS(th)/T_J		-6.3			mV/C
Gate-Source Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250 A	1.2		2.5	V
Gate-Source Leakage	I_GSS	V_DS = 0 V, V_GS = 20 V			100	nA
Zero Gate Voltage Drain Current	I_DSS	V_DS = 60 V, V_GS = 0 V			1	A
		V_DS = 60 V, V_GS = 0 V, T_J = 55 C			10	A
On-State Drain Current	I_D(on)	V_DS 5 V, V_GS = 10 V			25	A
Drain-Source On-State Resistance	R_DS(on)	V_GS = 10 V, I_D = 4.6 A		0.025
		V_GS = 4.5 V, I_D = 4.2 A		0.035
Forward Transconductance	g_fs	V_DS = 15 V, I_D = 4.6 A		20		S
Dynamic
Input Capacitance	C_iss	V_DS = 30 V, V_GS = 0 V, f = 1 MHz		1100		pF
Output Capacitance	C_oss			90
Reverse Transfer Capacitance	C_rss			55
Total Gate Charge	Q_g	V_DS = 30 V, V_GS = 10 V, I_D = 4.6 A		21	32	nC
		V_DS = 30 V, V_GS = 4.5 V, I_D = 4.6 A		16.5		nC
Gate-Source Charge	Q_gs			3.5		nC
Gate-Drain Charge	Q_gd			4.2		nC
Gate Resistance	R_g	f = 1 MHz		3.3	5
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current	I_S	T_C = 25 C			4.2	A
Pulse Diode Forward Current	I_SM				25	A
Body Diode Voltage	V_SD	I_S = 2 A		0.8	1.2	V
Body Diode Reverse Recovery Time	t_rr	I_F = 5.5 A, dI/dt = 100 A/s, T_J = 25 C		25	50	ns
Body Diode Reverse Recovery Charge	Q_rr			25	50	nC

Absolute Maximum Ratings

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	V_DS	60	V
Gate-Source Voltage	V_GS	20	V
Continuous Drain Current (T_C = 25 C)	I_D^a	7.6	A
Continuous Drain Current (T_C = 70 C)	I_D^a	6.8	A
Continuous Drain Current (T_A = 25 C)^{b, c}	I_D^a	4.8	A
Continuous Drain Current (T_A = 70 C)^{b, c}	I_D^a	6.1	A
Pulsed Drain Current	I_DM	25	A
Continuous Source-Drain Diode Current	I_S	4.2	A
Avalanche Current (L = 0.1 mH)	I_AS	15	A
Single-Pulse Avalanche Energy	E_AS	11.2	mJ
Maximum Power Dissipation (T_C = 25 C)	P_D	5	W
Maximum Power Dissipation (T_C = 70 C)	P_D	3.2	W
Maximum Power Dissipation (T_A = 25 C)^{b, c}	P_D	1.6	W
Maximum Power Dissipation (T_A = 70 C)^{b, c}	P_D	2.5	W
Operating Junction and Storage Temperature Range	T_J, T_stg	-55 to 150	C