P Channel 60 Volt Trench Power MOSFET VBsemi Elec SQD50P06 15L GE3 VB for Load Switching Applications
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Product Description
Product Overview
The SQD50P06-15L-GE3-VB is a P-Channel 60 V Trench Power MOSFET designed for load switching applications. It offers a low on-state resistance and robust performance.
Product Attributes
- Brand: VBsemi
- Material Categorization: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 µA | - 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 µA | - 1.5 | - | - 3 | V |
| Gate-Body Leakage | IGSS | VGS = ± 20 V, VDS = 0 V | - | - | ± 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 60 V, VGS = 0 V | - | - | - 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 60 V, VGS = 0 V, TJ = 125 °C | - | - | - 50 | µA |
| On-State Drain Current | ID(on) | VDS = - 5 V, VGS = - 10 V | - | - 50 | - | A |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 17 A | - | 0.02 | - | Ω |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 40 A | - | 0.025 | - | Ω |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 40 A, TJ = 125 °C | - | 0.030 | - | Ω |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 40 A, TJ = 150 °C | - | 0.035 | - | Ω |
| Forward Transconductance | gfs | VDS = - 15 V, ID = - 17 A | - | 61 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = - 25 V, f = 1 MHz | - | 2950 | - | pF |
| Output Capacitance | Coss | - | 380 | - | ||
| Reverse Transfer Capacitance | Crss | - | 305 | - | ||
| Total Gate Charge | Qg | VDS = - 30 V, VGS = - 10 V, ID = - 40 A | - | 110 | 165 | nC |
| Gate-Source Charge | Qgs | - | - | 19 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 28 | - | nC |
| Turn-On Delay Time | td(on) | VDD = - 30 V, RL = 0.6 Ω, ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Ω | - | 15 | 23 | ns |
| Rise Time | tr | - | 70 | 105 | ||
| Turn-Off Delay Time | td(off) | - | 175 | 260 | ||
| Fall Time | tf | - | 175 | 260 | ||
| Source-Drain Diode Ratings and Characteristics | ||||||
| Continuous Current | IS | TC = 25 °C | - | - 40 | - | A |
| Pulsed Current | ISM | - | - | - 80 | - | A |
| Forward Voltage | VSD | IF = - 40 A, VGS = 0 V | - | - 1 | - 1.6 | V |
| Reverse Recovery Time | trr | IF = - 40 A, di/dt = 100 A/µs | - | 45 | 70 | ns |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TC = 25 °C | - 60 | - | - | V |
| Gate-Source Voltage | VGS | - | ± 20 | - | - | V |
| Continuous Drain Current | ID | TC = 25 °C | - | - 45 | - | A |
| Continuous Drain Current | ID | TJ = 175 °C | - | - 5 | - | A |
| Pulsed Drain Current | IDM | - | - | - 160 | - | A |
| Avalanche Current | IAS | - | - | - 50 | - | A |
| Single Pulse Avalanche Energy | EAS | L = 0.1 mH | - | 125 | - | mJ |
| Power Dissipation | PD | TC = 25 °C | - | 113 | - | W |
| Power Dissipation | PD | TA = 25 °C | - | 2.5 | - | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - | - 55 | - | 150 | °C |
| Thermal Resistance Ratings | ||||||
| Junction-to-Ambient | RthJA | t ≤ 10 s | - | 15 | 18 | °C/W |
| Junction-to-Ambient | RthJA | Steady State | - | 40 | - | °C/W |
| Junction-to-Case | RthJC | - | - | 0.82 | 1.1 | °C/W |
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Sellina