Durable Single NPN Silicon Transistor Wayon WT3904F for Switching Applications in Electronic Devices
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The WT3904F is a single NPN silicon transistor designed for general-purpose switching applications. It is complementary to the WT3906F and comes in a compact DFN1006-3L package. This RoHS compliant device offers reliable performance for various electronic circuits.
Product Attributes
- Brand: WAYON
- Origin: China
- Material: Silicon
- Certifications: RoHS Compliant
- Marking Code: 1N
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 10A, IE = 0 | 60 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 1mA, IB = 0 | 40 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 10A, IC = 0 | 6 | - | - | V |
| Collector Cut-off Current | ICBO | VCB = 60V, IE = 0 | - | - | 100 | nA |
| Collector Cut-off Current | ICEX | VCE = 30V, VEB(off) = 3V | - | - | 50 | nA |
| Emitter Cut-off Current | IEBO | VEB = 5V, IC = 0 | - | - | 100 | nA |
| DC Current Gain | hFE(1) | VCE = 1V, IC = 10mA | 100 | - | 300 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 50mA, IB = 5mA | - | - | 0.30 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC = 50mA, IB = 5mA | - | - | 0.95 | V |
| Transition Frequency | fT | VCE= 20V, IC= 10mA, f= 100MHz | 300 | - | - | MHz |
| Delay Time | td | VCC = 3V, VBE(off) = 0.5V, IC = 10mA, IB1 = 1mA | - | 30 | - | ns |
| Rise Time | tr | - | 30 | - | ns | |
| Storage Time | ts | VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA | - | 160 | - | ns |
| Fall Time | tf | - | 40 | - | ns | |
| Collector Power Dissipation (FR4, single-sided copper, tin-plated, standard footprint) | PC1 | - | - | 100 | mW | |
| Collector Power Dissipation (FR4, single-sided copper, tin-plated, mounting pad for collector 1cm) | PC2 | - | - | 590 | mW | |
| Junction Temperature | Tj | - | - | 150 | C | |
| Storage Temperature | Tstg | -55 | - | 150 | C | |
| Thermal Resistance (Junction to Ambient, FR4, single-sided copper, tin-plated, standard footprint) | RJA1 | - | - | 1250 | C/W | |
| Thermal Resistance (Junction to Ambient, FR4, single-sided copper, tin-plated, mounting pad for collector 1cm) | RJA2 | - | - | 212 | C/W |
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Contact Person
Sellina