power management solution featuring VBsemi Elec STS7NF60L-VB N Channel Trench Power MOSFET for low side applications

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Product Description

Product Overview

The STS7NF60L-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient synchronous rectifier operation in low-side applications. It offers excellent thermal performance and is optimized for demanding power supply designs.

Product Attributes

Certifications: Halogen-free According to IEC 61249-2-21 Definition
Brand: VBsemi
Origin: Taiwan

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 A	60			V
VDS Temperature Coefficient	VDS/TJ	ID = 250 A		55		mV/C
VGS(th) Temperature Coefficient	VGS(th)/TJ	VDS = VGS, ID = 250 A		-6.3		mV/C
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 A	1.0		3.0	V
Gate-Source Leakage	IGSS	VGS = 20 V			100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 60 V, VGS = 0 V			1	A
Zero Gate Voltage Drain Current	IDSS	VDS = 60 V, VGS = 0 V, TJ = 55 C			10	A
On-State Drain Current	ID(on)	VDS 5 V, VGS = 10 V			25	A
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V, ID = 4.6 A		0.012
Drain-Source On-State Resistance	RDS(on)	VGS = 4.5 V, ID = 4.2 A		0.015
Forward Transconductance	gfs	VDS = 15 V, ID = 4.6 A		20		S
Input Capacitance	Ciss	VDS = 30 V, VGS = 0 V, f = 1 MHz		1100		pF
Output Capacitance	Coss	VDS = 30 V, VGS = 0 V, f = 1 MHz		90		pF
Reverse Transfer Capacitance	Crss	VDS = 30 V, VGS = 0 V, f = 1 MHz		55		pF
Total Gate Charge	Qg	VDS = 30 V, VGS = 10 V, ID = 4.6 A		21	32	nC
Gate-Source Charge	Qgs	VDS = 30 V, VGS = 4.5 V, ID = 4.6 A		10.5		nC
Gate-Drain Charge	Qgd	VDS = 30 V, VGS = 4.5 V, ID = 4.6 A		3.5	4.2	nC
Gate Resistance	Rg	f = 1 MHz		3.3	5
Turn-On Delay Time	td(on)	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1		20	30	ns
Rise Time	tr	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1		150	225	ns
Turn-Off Delay Time	td(off)	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1		20	30	ns
Fall Time	tf	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1		60	90	ns
Turn-On Delay Time	td(on)	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1		10	15	ns
Rise Time	tr	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1		15	25	ns
Turn-Off Delay Time	td(off)	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1		25	40	ns
Fall Time	tf	VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1		10	15	ns
Continuous Source-Drain Diode Current	IS	TC = 25 C			4.2	A
Pulse Diode Forward Current	ISM				25	A
Body Diode Voltage	VSD	IS = 2 A		0.8	1.2	V
Body Diode Reverse Recovery Time	trr	IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C		25	50	ns
Body Diode Reverse Recovery Charge	Qrr	IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C		25	50	nC
Reverse Recovery Fall Time	ta	IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C		19		ns
Reverse Recovery Rise Time	tb	IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C		6		ns
Continuous Drain Current	ID	TC = 25 C, TJ = 150 C			11	A
Continuous Drain Current	ID	TC = 70 C, TJ = 150 C			8.0b, c	A
Pulsed Drain Current	IDM				25	A
Continuous Source-Drain Diode Current	IS	TA = 25 C			4.2	A
Continuous Source-Drain Diode Current	IS	TA = 70 C			2.1b, c	A
Avalanche Current	IAS	L = 0.1 mH			15	A
Single-Pulse Avalanche Energy	EAS			11.2		mJ
Maximum Power Dissipation	PD	TC = 25 C			5	W
Maximum Power Dissipation	PD	TC = 70 C			3.2	W
Maximum Power Dissipation	PD	TA = 25 C			1.6b, c	W
Maximum Power Dissipation	PD	TA = 70 C			1.0b, c	W
Operating Junction and Storage Temperature Range	TJ, Tstg		-55		150	C
Maximum Junction-to-Ambient	RthJA	t 10 s		38	50	C/W
Maximum Junction-to-Foot (Drain)	RthJF	Steady State		20	25	S