Planar passivated power transistor WeEn PHE13003A 412 suitable for compact fluorescent lamps and inverter

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The PHE13003A is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching, high voltage capability, and very low switching and conduction losses, making it suitable for compact fluorescent lamps (CFL), electronic lighting ballasts, inverters, and off-line self-oscillating power supplies.

Product Attributes

Brand: WeEn Semiconductors
Package Type: SOT54 (TO-92)

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Static characteristics
ICES	collector-emitter cut-off current (base shorted)	VBE = 0 V; VCE = 700 V; Tj = 125 C	-	-	5	mA
IEBO	emitter-base cut-off current (collector open)	VEB = 9 V; IC = 0 A; Tlead = 25 C	-	-	1	mA
VCEOsus	collector-emitter sustaining voltage (base open)	IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; Fig. 4; Fig. 5	400	-	-	V
VCEsat	collector-emitter saturation voltage	IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 6	-	0.2	0.5	V
		IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 6	-	0.3	1	V
		IC = 0.75 A; IB = 250 mA; Tlead = 25 C; Fig. 6	-	0.4	1.5	V
VBEsat	base-emitter saturation voltage	IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 7	-	-	1	V
VBEsat	base-emitter saturation voltage	IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 7	-	-	1.2	V
hFE	DC current gain	IC = 0.5 mA; VCE = 2 V; Tlead = 25 C; Fig. 8; Fig. 9	12	-	-
		IC = 0.4 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9	10	-	30
		IC = 0.8 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9	5	7.5	20
Dynamic characteristics
tf	fall time	IC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; Fig. 10; Fig. 11	-	80	-	ns
Limiting values
VCESM	collector-emitter peak voltage	VBE = 0 V	-	-	700	V
VCBO	collector-base voltage	IE = 0 A	-	-	700	V
VCEO	collector-emitter voltage	IB = 0 A	-	-	400	V
VEBO	emitter-base voltage	IC = 0 A; I(Emitter) = 10 mA	-	-	9	V
IC	collector current DC; Fig. 1	-	-	1	A
ICM	peak collector current	-	-	2	A
IB	base current DC	-	-	0.5	A
IBM	peak base current	-	-	1	A
Ptot	total power dissipation	Tlead 25 C; Fig. 2	-	-	2.1	W
Tstg	storage temperature	-65	-	150	C
Tj	junction temperature	-	-	150	C
Thermal characteristics
Rth(j-lead)	thermal resistance from junction to lead	Fig. 3	-	-	60	K/W
Rth(j-a)	thermal resistance from junction to ambient free air	printed circuit board mounted; lead length = 4 mm	-	150	-	K/W