TOSHIBA 2SC4116-BL TE85L F Silicon NPN Transistor for Performance in Audio and AM Amplifier Circuits
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Product Description
2SC4116 Bipolar Transistor
The 2SC4116 is a silicon NPN epitaxial transistor designed for low-frequency amplification, audio frequency general purpose amplification, and AM amplifier applications. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. This transistor is AEC-Q101 qualified and is complementary to the 2SA1586.
Product Attributes
- Brand: Toshiba
- Type: Silicon NPN Epitaxial Transistor
- Certifications: AEC-Q101 qualified
- Package: USM
Technical Specifications
| Orderable Part Number | hFE Classification | AEC-Q101 | Note |
|---|---|---|---|
| 2SC4116-O | O (70 to 140) | YES | General Use |
| 2SC4116-Y | Y (120 to 240) | YES | General Use |
| 2SC4116-GR | GR (200 to 400) | YES | General Use |
| 2SC4116-BL | BL (350 to 700) | YES | General Use |
| 2SC4116-O,LF | O (70 to 140) | YES | General Use |
| 2SC4116-O,LXGF | O (70 to 140) | YES | Unintended Use |
| 2SC4116-O,LXHF | O (70 to 140) | YES | Automotive Use |
| 2SC4116-Y,LF | Y (120 to 240) | YES | General Use |
| 2SC4116-Y,LXGF | Y (120 to 240) | YES | Unintended Use |
| 2SC4116-Y,LXHF | Y (120 to 240) | YES | Automotive Use |
| 2SC4116-GR,LF | GR (200 to 400) | YES | General Use |
| 2SC4116-GR,LXGF | GR (200 to 400) | YES | Unintended Use |
| 2SC4116-GR,LXHF | GR (200 to 400) | YES | Automotive Use |
| 2SC4116-BL,LF | BL (350 to 700) | YES | General Use |
| 2SC4116-BL,LXGF | BL (350 to 700) | YES | Unintended Use |
| 2SC4116-BL,LXHF | BL (350 to 700) | YES | Automotive Use |
| Symbol | Characteristics | Rating | Unit |
|---|---|---|---|
| VCBO | Collector-base voltage | 60 | V |
| VCEO | Collector-emitter voltage | 50 | V |
| VEBO | Emitter-base voltage | 5 | V |
| IC | Collector current (DC) | 150 | mA |
| IB | Base current | 30 | mA |
| PC | Collector power dissipation | 200 | mW |
| Tj | Junction temperature | 150 | C |
| Tstg | Storage temperature | -55 to 125 | C |
| Symbol | Characteristics | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector cut-off current | VCB = 60 V, IE = 0 mA | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB = 5 V, IC = 0 mA | 0.1 | A | ||
| hFE | DC current gain | VCE = 6 V, IC = 2 mA | 70 | 700 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC = 100 mA, IB = 10 mA | 0.1 | 0.25 | V | |
| fT | Transition frequency | VCE = 10 V, IC = 1 mA | 80 | MHz | ||
| Cob | Collector output capacitance | VCB = 10 V, IE = 0 A, f = 1 MHz | 3.5 | pF | ||
| NF | Noise figure | VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k | 1.0 | 10 | dB |
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