TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and switching applications

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Product Description

Product Overview

The TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. Its small package (TO-236MOD/SC-59) makes it suitable for space-constrained designs.

Product Attributes

Brand: TOSHIBA
Type: Silicon PNP Epitaxial Transistor (PCT process)
Complementary to: 2SC3325
Package: JEDEC TO-236MOD / JEITA SC-59
Weight: 0.012 g (typ.)
Start of commercial production: 1982-12

Technical Specifications

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Collector cut-off current	ICBO	VCB = -50 V, IE = 0	-	-	-0.1	A
Emitter cut-off current	IEBO	VEB = -5 V, IC = 0	-	-	-0.1	A
DC current gain	hFE (1)	VCE = -1 V, IC = -100 mA	70	-	240	-
DC current gain	hFE (2)	VCE = -6 V, IC = -400 mA	25	-	-	-
Collector-emitter saturation voltage	VCE (sat)	IC = -100 mA, IB = -10 mA	-	-0.1	-0.25	V
Base-emitter voltage	VBE	VCE = -1 V, IC = -100 mA	-	-0.8	-1.0	V
Transition frequency	fT	VCE = -6 V, IC = -20 mA	-	200	-	MHz
Collector output capacitance	Cob	VCB = -6 V, IE = 0, f = 1 MHz	-	13	-	pF

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	-50	V
Collector-emitter voltage	VCEO	-50	V
Emitter-base voltage	VEBO	-5	V
Collector current	IC	-500	mA
Base current	IB	-50	mA
Collector power dissipation	PC	200	mW
Junction temperature	Tj	150	C
Storage temperature range	Tstg	-55 to 150	C