TOSHIBA 2SC4541 TE12L ZC Silicon NPN Epitaxial Transistor Designed for Power Switching and Amplifier
TOSHIBA 2SC4541 Silicon NPN Epitaxial Transistor
The TOSHIBA 2SC4541 is a high-performance silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = 0.5 V max) and high-speed switching time (tstg = 0.5 s typ.), making it suitable for efficient electronic circuits. The transistor is housed in a small flat package and is complementary to the 2SA1736.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon NPN Epitaxial Transistor (PCT process)
- Complementary to: 2SA1736
- Package: Small flat package (JEDEC SC-62, JEITA SC-62)
- Weight: 0.05 g (typ.)
- Certifications: RoHS Compatible (indicated by [[G]]/RoHS or [[G]]/RoHS [[Pb]])
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | 80 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 6 | V | |||
| Collector current | IC | 3 | A | |||
| Base current | IB | 0.6 | A | |||
| Collector power dissipation (mounted on a ceramic substrate) | PC | Note 1 | 1000 | mW | ||
| Collector power dissipation (mounted on a ceramic substrate) | PC | Note 1 | 500 | mW | ||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature range | Tstg | 55 | to | 150 | C | |
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector cut-off current | ICBO | VCB = 80 V, IE = 0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = 6 V, IC = 0 | 0.1 | A | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 50 | V | ||
| DC current gain (1) | hFE(1) | VCE = 2 V, IC = 100 mA | 120 | 400 | ||
| DC current gain (2) | hFE(2) | VCE = 2 V, IC = 2 A | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = 1.5 A, IB = 75 mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC = 1.5 A, IB = 75 mA | 1.2 | V | ||
| Transition frequency | fT | VCE = 2 V, IC = 100 mA | 100 | MHz | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 20 | pF | ||
| Turn-on time | ton | 0.1 | s | |||
| Storage time | tstg | 0.5 | s | |||
| Fall time | tf | 0.1 | s | |||
Notes:
Note 1: Mounted on a ceramic substrate (250 mm 0.8 t).
Note 2: Using continuously under heavy loads may cause significant decrease in reliability even if operating conditions are within absolute maximum ratings. Refer to Toshiba Semiconductor Reliability Handbook for details.
Note 3: A line to the right of a Lot No. indicates product label indication. Without a line: [[Pb]]/INCLUDES > MCV. With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]].
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