Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F Designed for High Frequency RF and IF Amplification
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Product Description
Product Overview
The TOSHIBA 2SC2714 is a silicon NPN epitaxial planar type transistor utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a low noise figure (NF = 2.5 dB typ.).
Product Attributes
- Brand: TOSHIBA
- Type: Silicon NPN Epitaxial Planar Type (PCT process)
- Origin: Japan (implied by TOSHIBA)
- Package: JEDEC TO-236 / JEITA SC-59 (TOSHIBA 2-3F1A)
- Weight: 12 mg (typ.)
- Start of Commercial Production: 1982-10
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-base voltage | VCBO | 40 | V | |||
| Collector-emitter voltage | VCEO | 30 | V | |||
| Emitter-base voltage | VEBO | 4 | V | |||
| Collector current | IC | 20 | mA | |||
| Base current | IB | 4 | mA | |||
| Collector power dissipation | PC | (Ta = 25C) | 100 | mW | ||
| Junction temperature | Tj | 125 | C | |||
| Storage temperature range | Tstg | -55 | 125 | C | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector cut-off current | ICBO | VCB = 40 V, IE = 0 | 0.5 | A | ||
| Emitter cut-off current | IEBO | VEB = 4 V, IC = 0 | 0.5 | A | ||
| DC current gain | hFE (Note) | VCE = 6 V, IC = 1 mA | 40 | 200 | ||
| Reverse transfer capacitance | Cre | VCB = 6 V, f = 1 MHz | 0.70 | pF | ||
| Transition frequency | fT | VCE = 6 V, IC = 1 mA | 550 | MHz | ||
| Collector-base time constant | Ccrbb | VCB = 6 V, IE = 1 mA, f = 30 MHz | 30 | ps | ||
| Noise figure | NF | 2.5 | 5.0 | dB | ||
| Power gain | Gpe | VCC = 6 V, IE = 1 mA, f = 100 MHz, Figure 1 | 17 | 23 | dB | |
| S-MINI Parameter (typ.) (Ta = 25C, Common emitter: VCE = 6 V, IE = 1 mA, f = 100 MHz) | ||||||
| Input conductance | gie | 2.9 | mS | |||
| Input capacitance | Cie | 10.2 | pF | |||
| Reverse transfer admittance | yre | 0.33 | mS | |||
| Phase angle of reverse transfer admittance | re | -90 | ||||
| Forward transfer admittance | |yfe| | 40 | mS | |||
| Phase angle of forward transfer admittance | fe | -20 | ||||
| Output conductance | goe | 45 | S | |||
| Output capacitance | Coe | 1.1 | pF | |||
| S-MINI Parameter (typ.) (Ta = 25C, Common base: VCE = 6 V, IE = 1 mA, f = 100 MHz) | ||||||
| Input conductance | gib | 34 | mS | |||
| Input capacitance | Cib | -10 | pF | |||
| Reverse transfer admittance | yrb | 0.27 | mS | |||
| Phase angle of reverse transfer admittance | rb | -105 | ||||
| Forward transfer admittance | |yfb| | 34 | mS | |||
| Phase angle of forward transfer admittance | fb | 165 | ||||
| Output conductance | gob | 45 | S | |||
| Output capacitance | Cob | 1.1 | pF | |||
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