Power Switching Silicon PNP Transistor TOSHIBA TTA008B Q with High DC Current Gain and Fast Response
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Product Description
Product Overview
The TTA008B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and power switching applications. It features high DC current gain, low collector-emitter saturation voltage, and high-speed switching capabilities. It is complementary to the TTC015B.
Product Attributes
- Brand: TOSHIBA
- Material: Silicon PNP Epitaxial
- Packaging: TO-126N
- Certifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings (Ta = 25 ℃ unless otherwise specified) | ||||
| Collector-base voltage | VCBO | -80 | V | |
| Collector-emitter voltage | VCEO | -80 | V | |
| Emitter-base voltage | VEBO | -7 | V | |
| Collector current (DC) | IC | -2 | A | |
| Collector current (pulsed) | ICP | -4 | A | |
| Base current | IB | -0.5 | A | |
| Collector power dissipation (Tc = 25 ℃) | PC | 1.5 | W | (Note 1) |
| Collector power dissipation (Ta = 25 ℃) | PC | 10 | W | (Note 1) |
| Junction temperature | Tj | 150 | ℃ | |
| Storage temperature | Tstg | -55 to 150 | ℃ | |
| Electrical Characteristics (Ta = 25 ℃ unless otherwise specified) | ||||
| Collector cut-off current | ICBO | -100 | nA | VCB = -80 V, IE = 0 A |
| Emitter cut-off current | IEBO | -100 | nA | VEB = -7 V, IC = 0 A |
| Collector-emitter breakdown voltage | V(BR)CEO | -80 | V | IC = -10 mA, IB = 0 A |
| DC current gain | hFE(1) | 80 | VCE = -2 V, IC = -1 mA | |
| hFE(2) | 100 | VCE = -2 V, IC = -0.5 A | ||
| hFE(3) | 200 | VCE = -2 V, IC = -1 A | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | -0.3 | V | IC = -0.5 A, IB = -50 mA |
| VCE(sat)(2) | -0.5 | V | IC = -1 A, IB = -100 mA | |
| Base-emitter saturation voltage | VBE(sat) | -1.5 | V | IC = -1 A, IB = -100 mA |
| Dynamic Characteristics (Ta = 25 ℃ unless otherwise specified) | ||||
| Collector output capacitance | Cob | 25 | pF | VCB = -10 V, IE = 0 A, f = 1 MHz |
| Transition frequency | fT | 100 | MHz | VCE = -2 V, IC = -0.5 A |
| Switching time (rise time) | tr | 30 | ns | See Figure 5.2.1 |
| Switching time (storage time) | tstg | 300 | ns | VCC ≈ -24 V, RL = 24 Ω, IB1 = 0.1 A, IB2 = 0.1 A |
| Switching time (fall time) | tf | 40 | ns | VCC ≈ -24 V, RL = 24 Ω, IB1 = 0.1 A, IB2 = 0.1 A |
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