PNP Silicon Transistor Wayon WT955 Designed for High Current and Power Dissipation Applications
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Product Description
WT955 PNP Silicon Transistor
The WT955 is a PNP Silicon Transistor designed for high current applications. It features 4 Amps continuous current (10 Amps peak current), extremely low saturation voltages, and excellent gain characteristics specified up to 3A. With a power dissipation of 3W and a SOT-223 package, this RoHS compliant transistor is suitable for various electronic applications.
Product Attributes
- Brand: WAYON
- Origin: China
- Material: Silicon
- Package: SOT-223
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | IC = -100A, IE=0 | -180 | -210 | - | V | |
| Collector-Emitter Breakdown Voltage | BVCER | IC = -1A, RB1k | -180 | -210 | - | V | |
| Collector-Emitter Breakdown Voltage | BVCEO | IC = -10mA, IB=0 | -140 | -170 | - | V | |
| Emitter-Base Breakdown Voltage | BVEBO | IE = -100A, IC=0 | -6 | -8 | - | V | |
| Collector Cutoff Current | ICBO | VCB = -150V | - | - | -50 | nA | |
| Collector Cutoff Current | ICBO | VCB = -150V, Tamb = 100C | - | - | -1 | A | |
| Collector Cutoff Current | ICER | R 1k VCB = -150V | - | - | -50 | nA | |
| Collector Cutoff Current | ICER | VCB = -150V, Tamb = 100C | - | - | -1 | A | |
| Emitter Cutoff Current | IEBO | VEB = -6V | - | - | -10 | nA | |
| Static Forward Current Transfer ratio | hFE(1) | IC = -10mA, VCE = -5V | 100 | 200 | - | - | |
| Static Forward Current Transfer ratio | hFE(2) | IC = -1A, VCE = -5V | 100 | 200 | 300 | - | |
| Static Forward Current Transfer ratio | hFE(3) | IC = -3A, VCE = -5V | 75 | 140 | - | - | |
| Static Forward Current Transfer ratio | hFE(4) | IC = -10A, VCE = -5V | - | 10 | - | - | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = -100mA, IB = -10mA | - | - | -30 | -60 | mV |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = -500mA, IB = -50mA | - | - | -70 | -120 | mV |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = -1A, IB = -100mA | - | - | -110 | -150 | mV |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = -3A, IB = -300mA | - | - | -275 | -370 | mV |
| Base-Emitter Saturation Voltage | VBE(sat) | IC = -3A, IB = -300mA | - | -970 | -1110 | mV | |
| Base-Emitter Turn-on Voltage | VBE(on) | IC = -3A, VCE= -5V | - | -830 | -950 | mV | |
| Transitional Frequency | fT | IC = -100mA, VCE = -10V, f = 50MHz | - | 110 | - | MHz | |
| Output Capacitance | Cobo | VCB = -20V, f = 1MHz | - | 40 | - | pF | |
| Switching Time | tON | VCC = -50V, IC = -1A, IB1 = -100mA, IB2 = 200mA | - | 68 | - | nS | |
| Switching Time | tOFF | VCC = -50V, IC = -1A, IB1 = -100mA, IB2 = 200mA | - | 1030 | - | nS |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -180 | V |
| Collector-Emitter Voltage | VCEO | -140 | V |
| Emitter-Base Voltage | VEBO | -6 | V |
| Continuous Collector Current | IC | -4 | A |
| Peak Pulse Current | ICM | -10 | A |
| Power Dissipation at Tamb=25 | Ptot | 3 | W |
| Operating and Storage Temperature Range | TJ ,TSTG | -55 to +150 | C |
Thermal Resistance
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Thermal Resistance from Junction to Ambient1 | RJA | 42 | C/ W |
| Thermal Resistance from Junction to Ambient2 | RJA | 78 | C/ W |
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