TOSHIBA HN4C06J-BL TE85L F Audio Frequency Amplifier Transistor Silicon NPN Epitaxial Type Component
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Product Description
Product Overview
The TOSHIBA HN4C06J is a Silicon NPN Epitaxial Type transistor utilizing the PCT Process, designed for general-purpose audio frequency amplifier applications. It offers high voltage capability (VCEO = 120V), high and linear DC current gain (hFE), low noise (NF = 1dB typ.), making it suitable for demanding audio circuits.
Product Attributes
- Brand: TOSHIBA
- Material: Silicon NPN Epitaxial Type (PCT Process)
- Applications: Audio Frequency General Purpose Amplifier
Technical Specifications
| Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | VCB = 120V, IE = 0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = 5V, IC = 0 | 0.1 | A | ||
| DC current gain | hFE | VCE = 6V, IC = 2mA | 200 | 700 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC = 10mA, IB = 1mA | 0.3 | V | ||
| Transition frequency | fT | VCE = 6V, IC = 1mA | 100 | MHz | ||
| Collector output capacitance | Cob | VCB = 10V, IE = 0, f = 1MHz | 3.0 | pF | ||
| Noise figure | NF | VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k | 1.0 | dB |
Absolute Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 120 | V |
| Collector-emitter voltage | VCEO | 120 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Base current | IB | 20 | mA |
| Collector power dissipation | PC* | 300 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | 55 to 150 | C |
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