Power transistor WeEn PHE13003C 412 designed for in CFL and off line self oscillating power supplies
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Product Description
WeEn Semiconductors PHE13003C NPN Power Transistor
The PHE13003C is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching speeds, high typical DC current gain, and a high voltage capability of 700 V, along with very low switching and conduction losses. This transistor is suitable for use in compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.
Product Attributes
- Brand: WeEn Semiconductors
- Product Type: NPN power transistor
- Package: SOT54 (TO-92)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| General | ||||||
| IC | collector current | - | - | - | 1.5 | A |
| Ptot | total power dissipation | Tlead ≤ 25 °C; Fig. 1 | - | - | 2.1 | W |
| VCESM | collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| Static Characteristics | ||||||
| hFE | DC current gain | IC = 0.5 A; VCE = 2 V; Tlead = 25 °C | 8 | 17 | 25 | - |
| hFE | DC current gain | IC = 1 A; VCE = 2 V; Tlead = 25 °C | 5 | 9 | 15 | - |
| ICES | collector-emitter cut-off current (base shorted) | VBE = 0 V; VCE = 700 V; Tj = 125 °C | - | - | 5 | mA |
| ICEO | collector-emitter cut-off current (base open) | VBE = 0 V; VCE = 700 V; Tj = 25 °C | - | - | 1 | mA |
| VCEOsus | collector-emitter sustaining voltage (base open) | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; Fig. 3; Fig. 4 | 400 | - | - | V |
| VCEsat | collector-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C | - | - | 0.5 | V |
| VBEsat | base-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C | - | - | 1 | V |
| Dynamic Characteristics | ||||||
| ton | turn-on time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6 | - | - | 1 | µs |
| ts | storage time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6 | - | - | 4 | µs |
| tf | fall time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6 | - | - | 0.7 | µs |
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