Silicon NPN Epitaxial Transistor TOSHIBA 2SC2712-GR LXHF for Audio Frequency Amplifier Applications
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Product Description
2SC2712 Bipolar Transistor
The 2SC2712 is a silicon NPN epitaxial transistor designed for low-frequency and general-purpose audio frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), and excellent hFE linearity. The transistor is AEC-Q101 qualified and complementary to the 2SA1162.
Product Attributes
- Brand: Toshiba
- Type: Silicon NPN Epitaxial Transistor
- Certifications: AEC-Q101 qualified
- Packaging: S-Mini
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | ||||
| Collector-emitter voltage | VCEO | 50 | V | ||||
| Emitter-base voltage | VEBO | 5 | V | ||||
| Collector current (DC) | IC | 150 | mA | ||||
| Base current | IB | 30 | mA | ||||
| Collector power dissipation | PC | 200 | mW | Ta = 25 ℃ (Note 2), (Note 4) | |||
| Junction temperature | Tj | 150 | ℃ | -55 to 150 | |||
| Storage temperature | Tstg | 125 | ℃ | (Note 2), (Note 3) | -55 to 125 | ||
| Collector cut-off current | ICBO | μA | VCB = 60 V, IE = 0 mA | 0.1 | |||
| Emitter cut-off current | IEBO | μA | VEB = 5 V, IC = 0 mA | 0.1 | |||
| DC current gain | hFE | VCE = 6 V, IC = 2 mA | 70 | 700 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC = 100 mA, IB = 10 mA | 0.1 | 0.25 | ||
| Transition frequency | fT | MHz | VCE = 10 V, IC = 1 mA | 80 | |||
| Collector output capacitance | Cob | pF | VCB = 10 V, IE = 0 A, f = 1 MHz | 2.0 | 3.5 | ||
| Noise figure | NF | dB | VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k℃ | 1.0 | 10 |
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