AEC Q101 Certified PNP Bipolar Transistor TOSHIBA 2SA1832-GR LF for Low Frequency Amplifier Circuits

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Product Description

Product Overview

The 2SA1832 is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = -50 V) and high collector current (IC = -150 mA max) capabilities, along with excellent hFE linearity. This transistor is AEC-Q101 qualified and is complementary to the 2SC4738, available in a small SSM package.

Product Attributes

Brand: Toshiba
Certifications: AEC-Q101 qualified
Complementary to: 2SC4738
Package Type: SSM

Technical Specifications

Orderable Part Number	AEC-Q101	Usage
2SA1832-O	YES	General Use
2SA1832-Y	YES	General Use
2SA1832-GR	YES	General Use
2SA1832-O,LF	YES	General Use
2SA1832-O,LXGF	YES	Unintended Use
2SA1832-O,LXHF	YES	Automotive Use
2SA1832-Y,LF	YES	General Use
2SA1832-Y,LXGF	YES	Unintended Use
2SA1832-Y,LXHF	YES	Automotive Use
2SA1832-GR,LF	YES	General Use
2SA1832-GR,LXGF	YES	Unintended Use
2SA1832-GR,LXHF	YES	Automotive Use

Characteristics	Symbol	Rating	Unit	Test Condition
Collector-base voltage	VCBO	-50	V
Collector-emitter voltage	VCEO	-50	V
Emitter-base voltage	VEBO	-5	V
Collector current (DC)	IC	-150	mA	(Note 2), (Note 4)
Base current	IB	-30	mA	(Note 3)
Collector power dissipation	PC	120	mW	(Note 2)
Collector power dissipation	PC	80	mW	(Note 3)
Junction temperature	Tj	150	°C	(Note 2), (Note 4)
Storage temperature	Tstg	-55 to 150	°C
Collector cut-off current	ICBO	-0.1	µA	VCB = -50 V, IE = 0 A
Emitter cut-off current	IEBO	-0.1	µA	VEB = -5 V, IC = 0 mA
DC current gain	hFE	70 to 400		VCE = -6 V, IC = -2 mA
Collector-emitter saturation voltage	VCE(sat)	-0.3	V	IC = -100 mA, IB = -10 mA
Transition frequency	fT	80	MHz	VCE = -10 V, IC = -1 mA
Collector output capacitance	Cob	7	pF	VCB = -10 V, IE = 0 A, f = 1 MHz