Power Switching MOSFET N Channel YANGJIE YJG210G06AR with UL 94 V0 Flammability Rating and Halogen Free Compliance
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Product Description
Product Overview
The YJG210G06AR is an N-Channel Enhancement Mode Field Effect Transistor featuring Split Gate Trench MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This product is designed for power switching applications, including uninterruptible power supplies, PD charging, and DC-DC converters. It meets UL 94 V-0 flammability rating and is Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG210G06AR
- Technology: Split Gate Trench MOSFET
- Certifications: UL 94 V-0 Flammability Rating, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25°C | 25 | A | ||
| ID | TA=100°C | 15 | A | |||
| Drain Current | ID | TC=25°C | 210 | A | ||
| Drain Current | ID | TC=100°C | 132 | A | ||
| Pulsed Drain Current | IDM | 840 | A | |||
| Avalanche energy | EAS | TJ=25°C, VG=10V, RG=25Ω, L=0.5mH, IAS=48A | 576 | mJ | ||
| Total Power Dissipation | PD | TA=25°C | 2.2 | W | ||
| PD | TA=100°C | 0.9 | W | |||
| Total Power Dissipation | PD | TC=25°C | 208 | W | ||
| Total Power Dissipation | PD | TC=100°C | 83 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | °C | ||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RθJA | D | 45 | 55 | °C/W | |
| Thermal Resistance Junction-to-Case Steady-State | RθJC | D | 0.5 | 0.6 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | μA |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V, Tj=150°C | - | - | 100 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=50A | - | 1.2 | 1.6 | mΩ |
| RDS(ON) | VGS=10V, ID=20A | - | 1.2 | 1.6 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 1.8 | 2.5 | mΩ |
| Diode Forward Voltage | VSD | IS=50A, VGS=0V | - | - | 1.2 | V |
| Gate resistance | RG | f=1MHz | - | 2.1 | - | Ω |
| Maximum Body-Diode Continuous Current | IS | - | - | 210 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=500KHz | - | 6180 | - | pF |
| Output Capacitance | Coss | - | 2080 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 70 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=105A | - | 119 | - | nC |
| Gate-Source Charge | Qgs | - | 27 | - | nC | |
| Gate-Drain Charge | Qg | - | 28 | - | nC | |
| Reverse Recovery Charge | Qrr | IF=60A, di/dt=100A/us | - | 67 | - | nC |
| Reverse Recovery Time | trr | - | 56 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=30V, ID=105A, RGEN=3Ω | - | 19 | - | nS |
| Turn-on Rise Time | tr | - | 53 | - | nS | |
| Turn-off Delay Time | tD(off) | - | 82 | - | nS | |
| Turn-off fall Time | tf | - | 48 | - | nS | |
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